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Tunable graphene system with two decoupled monolayers

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Tunable graphene system with two decoupled monolayers. / Schmidt, H.; Luedtke, T.; Barthold, P. et al.
In: Applied Physics Letters, Vol. 93, No. 17, 172108, 27.10.2008.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Schmidt, H, Luedtke, T, Barthold, P, McCann, E, Falko, V & Haug, RJ 2008, 'Tunable graphene system with two decoupled monolayers', Applied Physics Letters, vol. 93, no. 17, 172108. https://doi.org/10.1063/1.3012369

APA

Schmidt, H., Luedtke, T., Barthold, P., McCann, E., Falko, V., & Haug, R. J. (2008). Tunable graphene system with two decoupled monolayers. Applied Physics Letters, 93(17), Article 172108. https://doi.org/10.1063/1.3012369

Vancouver

Schmidt H, Luedtke T, Barthold P, McCann E, Falko V, Haug RJ. Tunable graphene system with two decoupled monolayers. Applied Physics Letters. 2008 Oct 27;93(17):172108. doi: 10.1063/1.3012369

Author

Schmidt, H. ; Luedtke, T. ; Barthold, P. et al. / Tunable graphene system with two decoupled monolayers. In: Applied Physics Letters. 2008 ; Vol. 93, No. 17.

Bibtex

@article{8e07289fa5344bbc8ebaa235b144665d,
title = "Tunable graphene system with two decoupled monolayers",
abstract = "The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these newly-developed devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nanometer scale separation between them.",
keywords = "carbon, carrier density, elemental semiconductors, field effect transistors, monolayers, nanoelectronics, nanostructured materials, Shubnikov-de Haas effect",
author = "H. Schmidt and T. Luedtke and P. Barthold and E. McCann and Vladimir Falko and Haug, {R. J.}",
year = "2008",
month = oct,
day = "27",
doi = "10.1063/1.3012369",
language = "English",
volume = "93",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "17",

}

RIS

TY - JOUR

T1 - Tunable graphene system with two decoupled monolayers

AU - Schmidt, H.

AU - Luedtke, T.

AU - Barthold, P.

AU - McCann, E.

AU - Falko, Vladimir

AU - Haug, R. J.

PY - 2008/10/27

Y1 - 2008/10/27

N2 - The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these newly-developed devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nanometer scale separation between them.

AB - The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these newly-developed devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nanometer scale separation between them.

KW - carbon

KW - carrier density

KW - elemental semiconductors

KW - field effect transistors

KW - monolayers

KW - nanoelectronics

KW - nanostructured materials

KW - Shubnikov-de Haas effect

UR - http://www.scopus.com/inward/record.url?scp=55149104637&partnerID=8YFLogxK

U2 - 10.1063/1.3012369

DO - 10.1063/1.3012369

M3 - Journal article

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 17

M1 - 172108

ER -