Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Tunable Spin Loading and T-1 of a Silicon Spin Qubit Measured by Single-Shot Readout
AU - Simmons, C. B.
AU - Prance, J. R.
AU - Van Bael, B. J.
AU - Koh, Teck Seng
AU - Shi, Zhan
AU - Savage, D. E.
AU - Lagally, M. G.
AU - Joynt, R.
AU - Friesen, Mark
AU - Coppersmith, S. N.
AU - Eriksson, M. A.
PY - 2011/4/11
Y1 - 2011/4/11
N2 - We demonstrate single-shot readout of a silicon quantum dot spin qubit, and we measure the spin relaxation time T-1. We show that the rate of spin loading can be tuned by an order of magnitude by changing the amplitude of a pulsed-gate voltage, and the fraction of spin-up electrons loaded can also be controlled. This tunability arises because electron spins can be loaded through an orbital excited state. Using a theory that includes excited states of the dot and energy-dependent tunneling, we find that a global fit to the loading rate and spin-up fraction is in good agreement with the data.
AB - We demonstrate single-shot readout of a silicon quantum dot spin qubit, and we measure the spin relaxation time T-1. We show that the rate of spin loading can be tuned by an order of magnitude by changing the amplitude of a pulsed-gate voltage, and the fraction of spin-up electrons loaded can also be controlled. This tunability arises because electron spins can be loaded through an orbital excited state. Using a theory that includes excited states of the dot and energy-dependent tunneling, we find that a global fit to the loading rate and spin-up fraction is in good agreement with the data.
UR - http://www.scopus.com/inward/record.url?scp=79960641382&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.106.156804
DO - 10.1103/PhysRevLett.106.156804
M3 - Journal article
VL - 106
SP - -
JO - Physical review letters
JF - Physical review letters
SN - 0031-9007
IS - 15
M1 - 156804
ER -