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Tunable Spin Loading and T-1 of a Silicon Spin Qubit Measured by Single-Shot Readout

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Tunable Spin Loading and T-1 of a Silicon Spin Qubit Measured by Single-Shot Readout. / Simmons, C. B.; Prance, J. R.; Van Bael, B. J. et al.
In: Physical review letters, Vol. 106, No. 15, 156804, 11.04.2011, p. -.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Simmons, CB, Prance, JR, Van Bael, BJ, Koh, TS, Shi, Z, Savage, DE, Lagally, MG, Joynt, R, Friesen, M, Coppersmith, SN & Eriksson, MA 2011, 'Tunable Spin Loading and T-1 of a Silicon Spin Qubit Measured by Single-Shot Readout', Physical review letters, vol. 106, no. 15, 156804, pp. -. https://doi.org/10.1103/PhysRevLett.106.156804

APA

Simmons, C. B., Prance, J. R., Van Bael, B. J., Koh, T. S., Shi, Z., Savage, D. E., Lagally, M. G., Joynt, R., Friesen, M., Coppersmith, S. N., & Eriksson, M. A. (2011). Tunable Spin Loading and T-1 of a Silicon Spin Qubit Measured by Single-Shot Readout. Physical review letters, 106(15), -. Article 156804. https://doi.org/10.1103/PhysRevLett.106.156804

Vancouver

Simmons CB, Prance JR, Van Bael BJ, Koh TS, Shi Z, Savage DE et al. Tunable Spin Loading and T-1 of a Silicon Spin Qubit Measured by Single-Shot Readout. Physical review letters. 2011 Apr 11;106(15):-. 156804. doi: 10.1103/PhysRevLett.106.156804

Author

Simmons, C. B. ; Prance, J. R. ; Van Bael, B. J. et al. / Tunable Spin Loading and T-1 of a Silicon Spin Qubit Measured by Single-Shot Readout. In: Physical review letters. 2011 ; Vol. 106, No. 15. pp. -.

Bibtex

@article{558445f01c0d45ad80f6986d9cd39df6,
title = "Tunable Spin Loading and T-1 of a Silicon Spin Qubit Measured by Single-Shot Readout",
abstract = "We demonstrate single-shot readout of a silicon quantum dot spin qubit, and we measure the spin relaxation time T-1. We show that the rate of spin loading can be tuned by an order of magnitude by changing the amplitude of a pulsed-gate voltage, and the fraction of spin-up electrons loaded can also be controlled. This tunability arises because electron spins can be loaded through an orbital excited state. Using a theory that includes excited states of the dot and energy-dependent tunneling, we find that a global fit to the loading rate and spin-up fraction is in good agreement with the data.",
author = "Simmons, {C. B.} and Prance, {J. R.} and {Van Bael}, {B. J.} and Koh, {Teck Seng} and Zhan Shi and Savage, {D. E.} and Lagally, {M. G.} and R. Joynt and Mark Friesen and Coppersmith, {S. N.} and Eriksson, {M. A.}",
year = "2011",
month = apr,
day = "11",
doi = "10.1103/PhysRevLett.106.156804",
language = "English",
volume = "106",
pages = "--",
journal = "Physical review letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "15",

}

RIS

TY - JOUR

T1 - Tunable Spin Loading and T-1 of a Silicon Spin Qubit Measured by Single-Shot Readout

AU - Simmons, C. B.

AU - Prance, J. R.

AU - Van Bael, B. J.

AU - Koh, Teck Seng

AU - Shi, Zhan

AU - Savage, D. E.

AU - Lagally, M. G.

AU - Joynt, R.

AU - Friesen, Mark

AU - Coppersmith, S. N.

AU - Eriksson, M. A.

PY - 2011/4/11

Y1 - 2011/4/11

N2 - We demonstrate single-shot readout of a silicon quantum dot spin qubit, and we measure the spin relaxation time T-1. We show that the rate of spin loading can be tuned by an order of magnitude by changing the amplitude of a pulsed-gate voltage, and the fraction of spin-up electrons loaded can also be controlled. This tunability arises because electron spins can be loaded through an orbital excited state. Using a theory that includes excited states of the dot and energy-dependent tunneling, we find that a global fit to the loading rate and spin-up fraction is in good agreement with the data.

AB - We demonstrate single-shot readout of a silicon quantum dot spin qubit, and we measure the spin relaxation time T-1. We show that the rate of spin loading can be tuned by an order of magnitude by changing the amplitude of a pulsed-gate voltage, and the fraction of spin-up electrons loaded can also be controlled. This tunability arises because electron spins can be loaded through an orbital excited state. Using a theory that includes excited states of the dot and energy-dependent tunneling, we find that a global fit to the loading rate and spin-up fraction is in good agreement with the data.

UR - http://www.scopus.com/inward/record.url?scp=79960641382&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.106.156804

DO - 10.1103/PhysRevLett.106.156804

M3 - Journal article

VL - 106

SP - -

JO - Physical review letters

JF - Physical review letters

SN - 0031-9007

IS - 15

M1 - 156804

ER -