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Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings

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Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings. / Kamarudin, M. Ahmad; Hayne, M.; Young, R. J. et al.
In: Physical review B, Vol. 83, No. 11, 115311 , 10.03.2011.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Kamarudin MA, Hayne M, Young RJ, Zhuang QD, Ben T, Molina SI. Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings. Physical review B. 2011 Mar 10;83(11):115311 . doi: 10.1103/PhysRevB.83.115311

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Kamarudin, M. Ahmad ; Hayne, M. ; Young, R. J. et al. / Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings. In: Physical review B. 2011 ; Vol. 83, No. 11.

Bibtex

@article{1455a7e724b9453d9efe5b2ea474d02e,
title = "Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings",
abstract = "Type-II self-assembled GaSb/GaAs nanostructures have been grown by molecular-beam epitaxy and studied by atomic-force microscopy, transmission electron microscopy, and power-dependent magnetophotoluminescence. Nanostructures on the sample surface are found to be entirely dotlike, while capped nanostructures are predominantly ringlike. Moreover, an in situ anneal process applied after thinly capping the dots is shown to enhance the severity of the rings and relax the strain in the matrix in the proximity of the GaSb, resulting in a change to the spatial configuration of the exciton complexes and their optical properties.",
keywords = "SEMICONDUCTOR NANOSTRUCTURES, DOTS, ELECTRON, STATES",
author = "Kamarudin, {M. Ahmad} and M. Hayne and Young, {R. J.} and Zhuang, {Q. D.} and T. Ben and Molina, {S. I.}",
note = "{\textcopyright}2011 American Physical Society",
year = "2011",
month = mar,
day = "10",
doi = "10.1103/PhysRevB.83.115311",
language = "English",
volume = "83",
journal = "Physical review B",
issn = "1550-235X",
publisher = "AMER PHYSICAL SOC",
number = "11",

}

RIS

TY - JOUR

T1 - Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings

AU - Kamarudin, M. Ahmad

AU - Hayne, M.

AU - Young, R. J.

AU - Zhuang, Q. D.

AU - Ben, T.

AU - Molina, S. I.

N1 - ©2011 American Physical Society

PY - 2011/3/10

Y1 - 2011/3/10

N2 - Type-II self-assembled GaSb/GaAs nanostructures have been grown by molecular-beam epitaxy and studied by atomic-force microscopy, transmission electron microscopy, and power-dependent magnetophotoluminescence. Nanostructures on the sample surface are found to be entirely dotlike, while capped nanostructures are predominantly ringlike. Moreover, an in situ anneal process applied after thinly capping the dots is shown to enhance the severity of the rings and relax the strain in the matrix in the proximity of the GaSb, resulting in a change to the spatial configuration of the exciton complexes and their optical properties.

AB - Type-II self-assembled GaSb/GaAs nanostructures have been grown by molecular-beam epitaxy and studied by atomic-force microscopy, transmission electron microscopy, and power-dependent magnetophotoluminescence. Nanostructures on the sample surface are found to be entirely dotlike, while capped nanostructures are predominantly ringlike. Moreover, an in situ anneal process applied after thinly capping the dots is shown to enhance the severity of the rings and relax the strain in the matrix in the proximity of the GaSb, resulting in a change to the spatial configuration of the exciton complexes and their optical properties.

KW - SEMICONDUCTOR NANOSTRUCTURES

KW - DOTS

KW - ELECTRON

KW - STATES

UR - http://www.scopus.com/inward/record.url?scp=79961039613&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.83.115311

DO - 10.1103/PhysRevB.83.115311

M3 - Journal article

VL - 83

JO - Physical review B

JF - Physical review B

SN - 1550-235X

IS - 11

M1 - 115311

ER -