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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings
AU - Kamarudin, M. Ahmad
AU - Hayne, M.
AU - Young, R. J.
AU - Zhuang, Q. D.
AU - Ben, T.
AU - Molina, S. I.
N1 - ©2011 American Physical Society
PY - 2011/3/10
Y1 - 2011/3/10
N2 - Type-II self-assembled GaSb/GaAs nanostructures have been grown by molecular-beam epitaxy and studied by atomic-force microscopy, transmission electron microscopy, and power-dependent magnetophotoluminescence. Nanostructures on the sample surface are found to be entirely dotlike, while capped nanostructures are predominantly ringlike. Moreover, an in situ anneal process applied after thinly capping the dots is shown to enhance the severity of the rings and relax the strain in the matrix in the proximity of the GaSb, resulting in a change to the spatial configuration of the exciton complexes and their optical properties.
AB - Type-II self-assembled GaSb/GaAs nanostructures have been grown by molecular-beam epitaxy and studied by atomic-force microscopy, transmission electron microscopy, and power-dependent magnetophotoluminescence. Nanostructures on the sample surface are found to be entirely dotlike, while capped nanostructures are predominantly ringlike. Moreover, an in situ anneal process applied after thinly capping the dots is shown to enhance the severity of the rings and relax the strain in the matrix in the proximity of the GaSb, resulting in a change to the spatial configuration of the exciton complexes and their optical properties.
KW - SEMICONDUCTOR NANOSTRUCTURES
KW - DOTS
KW - ELECTRON
KW - STATES
UR - http://www.scopus.com/inward/record.url?scp=79961039613&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.83.115311
DO - 10.1103/PhysRevB.83.115311
M3 - Journal article
VL - 83
JO - Physical review B
JF - Physical review B
SN - 1550-235X
IS - 11
M1 - 115311
ER -