Home > Research > Publications & Outputs > Tuning thermoelectric properties of graphene/bo...

Electronic data

  • 1510.00948

    Rights statement: This is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi:10.1088/0957-4484/26/47/475401

    Accepted author manuscript, 946 KB, PDF document

    Available under license: CC BY: Creative Commons Attribution 4.0 International License

Links

Text available via DOI:

View graph of relations

Tuning thermoelectric properties of graphene/boron nitride heterostructures

Research output: Contribution to journalJournal articlepeer-review

Published

Standard

Tuning thermoelectric properties of graphene/boron nitride heterostructures. / Algharagholy, Laith A.; Al-Galiby, Qusiy; Marhoon, Haider A.; Sadeghi, Hatef; Abduljalil, Hayder M.; Lambert, Colin J.

In: Nanotechnology, Vol. 26, No. 47, 475401, 03.11.2015.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Algharagholy, LA, Al-Galiby, Q, Marhoon, HA, Sadeghi, H, Abduljalil, HM & Lambert, CJ 2015, 'Tuning thermoelectric properties of graphene/boron nitride heterostructures', Nanotechnology, vol. 26, no. 47, 475401. https://doi.org/10.1088/0957-4484/26/47/475401

APA

Algharagholy, L. A., Al-Galiby, Q., Marhoon, H. A., Sadeghi, H., Abduljalil, H. M., & Lambert, C. J. (2015). Tuning thermoelectric properties of graphene/boron nitride heterostructures. Nanotechnology, 26(47), [475401]. https://doi.org/10.1088/0957-4484/26/47/475401

Vancouver

Algharagholy LA, Al-Galiby Q, Marhoon HA, Sadeghi H, Abduljalil HM, Lambert CJ. Tuning thermoelectric properties of graphene/boron nitride heterostructures. Nanotechnology. 2015 Nov 3;26(47). 475401. https://doi.org/10.1088/0957-4484/26/47/475401

Author

Algharagholy, Laith A. ; Al-Galiby, Qusiy ; Marhoon, Haider A. ; Sadeghi, Hatef ; Abduljalil, Hayder M. ; Lambert, Colin J. / Tuning thermoelectric properties of graphene/boron nitride heterostructures. In: Nanotechnology. 2015 ; Vol. 26, No. 47.

Bibtex

@article{06cb6ecf2d4c4356bf0ba120634790ec,
title = "Tuning thermoelectric properties of graphene/boron nitride heterostructures",
abstract = "Using density functional theory combined with a Green's function scattering approach, we examine the thermoelectric properties of hetero-nanoribbons formed from alternating lengths of graphene and boron nitride. In such structures, the boron nitride acts as a tunnel barrier, which weakly couples states in the graphene, to form mini-bands. In un-doped nanoribbons, the mini bands are symmetrically positioned relative to the Fermi energy and do not enhance thermoelectric performance significantly. In contrast, when the ribbons are doped by electron donating or electron accepting adsorbates, the thermopower S and electronic figure of merit are enhanced and either positive or negative thermopowers can be obtained. In the most favourable case, doping with the electron donor tetrathiafulvalene increases the room-temperature thermopower to -284 μv K(-1) and doping by the electron acceptor tetracyanoethylene increases S to 210 μv K(-1). After including both electron and phonon contributions to the thermal conductance, figures of merit ZT up to of order 0.9 are obtained.",
keywords = "nanoelectronics, theropower, boron nitride",
author = "Algharagholy, {Laith A.} and Qusiy Al-Galiby and Marhoon, {Haider A.} and Hatef Sadeghi and Abduljalil, {Hayder M.} and Lambert, {Colin J.}",
note = "This is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi:10.1088/0957-4484/26/47/475401",
year = "2015",
month = nov,
day = "3",
doi = "10.1088/0957-4484/26/47/475401",
language = "English",
volume = "26",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "47",

}

RIS

TY - JOUR

T1 - Tuning thermoelectric properties of graphene/boron nitride heterostructures

AU - Algharagholy, Laith A.

AU - Al-Galiby, Qusiy

AU - Marhoon, Haider A.

AU - Sadeghi, Hatef

AU - Abduljalil, Hayder M.

AU - Lambert, Colin J.

N1 - This is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi:10.1088/0957-4484/26/47/475401

PY - 2015/11/3

Y1 - 2015/11/3

N2 - Using density functional theory combined with a Green's function scattering approach, we examine the thermoelectric properties of hetero-nanoribbons formed from alternating lengths of graphene and boron nitride. In such structures, the boron nitride acts as a tunnel barrier, which weakly couples states in the graphene, to form mini-bands. In un-doped nanoribbons, the mini bands are symmetrically positioned relative to the Fermi energy and do not enhance thermoelectric performance significantly. In contrast, when the ribbons are doped by electron donating or electron accepting adsorbates, the thermopower S and electronic figure of merit are enhanced and either positive or negative thermopowers can be obtained. In the most favourable case, doping with the electron donor tetrathiafulvalene increases the room-temperature thermopower to -284 μv K(-1) and doping by the electron acceptor tetracyanoethylene increases S to 210 μv K(-1). After including both electron and phonon contributions to the thermal conductance, figures of merit ZT up to of order 0.9 are obtained.

AB - Using density functional theory combined with a Green's function scattering approach, we examine the thermoelectric properties of hetero-nanoribbons formed from alternating lengths of graphene and boron nitride. In such structures, the boron nitride acts as a tunnel barrier, which weakly couples states in the graphene, to form mini-bands. In un-doped nanoribbons, the mini bands are symmetrically positioned relative to the Fermi energy and do not enhance thermoelectric performance significantly. In contrast, when the ribbons are doped by electron donating or electron accepting adsorbates, the thermopower S and electronic figure of merit are enhanced and either positive or negative thermopowers can be obtained. In the most favourable case, doping with the electron donor tetrathiafulvalene increases the room-temperature thermopower to -284 μv K(-1) and doping by the electron acceptor tetracyanoethylene increases S to 210 μv K(-1). After including both electron and phonon contributions to the thermal conductance, figures of merit ZT up to of order 0.9 are obtained.

KW - nanoelectronics

KW - theropower

KW - boron nitride

U2 - 10.1088/0957-4484/26/47/475401

DO - 10.1088/0957-4484/26/47/475401

M3 - Journal article

C2 - 26528629

VL - 26

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 47

M1 - 475401

ER -