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Two processing techniques to sandwich a 100 nm GaAs layer between ferromagnetic metallic electrodes

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Two processing techniques to sandwich a 100 nm GaAs layer between ferromagnetic metallic electrodes. / Aziz, A; Smith, CG; Winiecki, GP et al.
In: Journal of Vacuum Science and Technology B, Vol. 21, No. 4, 07.2003, p. 1449-1452.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Aziz, A, Smith, CG, Winiecki, GP, Beere, HE & Ritchie, DA 2003, 'Two processing techniques to sandwich a 100 nm GaAs layer between ferromagnetic metallic electrodes', Journal of Vacuum Science and Technology B, vol. 21, no. 4, pp. 1449-1452. https://doi.org/10.1116/1.1592811

APA

Aziz, A., Smith, CG., Winiecki, GP., Beere, HE., & Ritchie, DA. (2003). Two processing techniques to sandwich a 100 nm GaAs layer between ferromagnetic metallic electrodes. Journal of Vacuum Science and Technology B, 21(4), 1449-1452. https://doi.org/10.1116/1.1592811

Vancouver

Aziz A, Smith CG, Winiecki GP, Beere HE, Ritchie DA. Two processing techniques to sandwich a 100 nm GaAs layer between ferromagnetic metallic electrodes. Journal of Vacuum Science and Technology B. 2003 Jul;21(4):1449-1452. doi: 10.1116/1.1592811

Author

Aziz, A ; Smith, CG ; Winiecki, GP et al. / Two processing techniques to sandwich a 100 nm GaAs layer between ferromagnetic metallic electrodes. In: Journal of Vacuum Science and Technology B. 2003 ; Vol. 21, No. 4. pp. 1449-1452.

Bibtex

@article{1a2950063c8b44c6ba38437ebc7f978d,
title = "Two processing techniques to sandwich a 100 nm GaAs layer between ferromagnetic metallic electrodes",
abstract = "We report two processing techniques to sandwich a thin (tens of nanometers) GaAs layer between ferromagnetic metallic electrodes. Such devices are valuable in the study of the spin properties of electrons in semiconductors. In these processes an AlAs layer is selectively etched from underneath a GaAs/NiFe/Au heterostructure using hydrofluoric acid. Subsequently, the rest of the structure which comprises GaAs/NiFe/Au is inverted in such a way that the GaAs layer lies on the top of the NiFe layer. The mean roughness of the inverted GaAs surface is 1.2 nm and it is crack free. In the first process, structures with an area of tens of microns are inverted on the same chip. In the second process, small disks with an area of a few microns are inverted on a different host chip. (C) 2003 American Vacuum Society.",
keywords = "INJECTION",
author = "A Aziz and CG Smith and GP Winiecki and HE Beere and DA Ritchie",
year = "2003",
month = jul,
doi = "10.1116/1.1592811",
language = "English",
volume = "21",
pages = "1449--1452",
journal = "Journal of Vacuum Science and Technology B",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "4",

}

RIS

TY - JOUR

T1 - Two processing techniques to sandwich a 100 nm GaAs layer between ferromagnetic metallic electrodes

AU - Aziz, A

AU - Smith, CG

AU - Winiecki, GP

AU - Beere, HE

AU - Ritchie, DA

PY - 2003/7

Y1 - 2003/7

N2 - We report two processing techniques to sandwich a thin (tens of nanometers) GaAs layer between ferromagnetic metallic electrodes. Such devices are valuable in the study of the spin properties of electrons in semiconductors. In these processes an AlAs layer is selectively etched from underneath a GaAs/NiFe/Au heterostructure using hydrofluoric acid. Subsequently, the rest of the structure which comprises GaAs/NiFe/Au is inverted in such a way that the GaAs layer lies on the top of the NiFe layer. The mean roughness of the inverted GaAs surface is 1.2 nm and it is crack free. In the first process, structures with an area of tens of microns are inverted on the same chip. In the second process, small disks with an area of a few microns are inverted on a different host chip. (C) 2003 American Vacuum Society.

AB - We report two processing techniques to sandwich a thin (tens of nanometers) GaAs layer between ferromagnetic metallic electrodes. Such devices are valuable in the study of the spin properties of electrons in semiconductors. In these processes an AlAs layer is selectively etched from underneath a GaAs/NiFe/Au heterostructure using hydrofluoric acid. Subsequently, the rest of the structure which comprises GaAs/NiFe/Au is inverted in such a way that the GaAs layer lies on the top of the NiFe layer. The mean roughness of the inverted GaAs surface is 1.2 nm and it is crack free. In the first process, structures with an area of tens of microns are inverted on the same chip. In the second process, small disks with an area of a few microns are inverted on a different host chip. (C) 2003 American Vacuum Society.

KW - INJECTION

U2 - 10.1116/1.1592811

DO - 10.1116/1.1592811

M3 - Journal article

VL - 21

SP - 1449

EP - 1452

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

SN - 1071-1023

IS - 4

ER -