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Ultrashort-pulse lasers passively mode locked by quantum-dot-based saturable absorbers

Research output: Contribution to journalJournal article

<mark>Journal publication date</mark>01/2010
<mark>Journal</mark>Progress in Quantum Electronics
Issue number1
Number of pages45
Pages (from-to)1-45
Publication StatusPublished
Early online date4/12/09
<mark>Original language</mark>English


Some key recent achievements in the development of novel saturable absorbers that are based on semiconductor quantum-dot (QD) structures for the passive mode locking of near-infrared lasers are outlined. These are group IV–VI semiconductor nanoparticles (quantum dots) in glass matrices and self-assembled semiconductor quantum dots (group III–V) grown on semiconductor mirrors (QD-SESAMs). The performance of solid-state (Yb3+, Nd3+ and Cr4+-based), Yb-doped fibre and monolithically integrated semiconductor lasers has been described within the context of ultrashort-pulse generation using these types of QD-based modulators. Particular attention has been paid to the nonlinear parameters of the QD-based saturable absorbers that determine the quality of the mode locking in such laser systems.