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Ultrashort-pulse lasers passively mode locked by quantum-dot-based saturable absorbers

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Ultrashort-pulse lasers passively mode locked by quantum-dot-based saturable absorbers. / Lagatsky, A. A.; Leburn, C. G.; Brown, C. T. A. et al.
In: Progress in Quantum Electronics, Vol. 34, No. 1, 01.2010, p. 1-45.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Lagatsky, AA, Leburn, CG, Brown, CTA, Sibbett, W, Zolotovskaya, S & Rafailov, EU 2010, 'Ultrashort-pulse lasers passively mode locked by quantum-dot-based saturable absorbers', Progress in Quantum Electronics, vol. 34, no. 1, pp. 1-45. https://doi.org/10.1016/j.pquantelec.2009.11.001

APA

Lagatsky, A. A., Leburn, C. G., Brown, C. T. A., Sibbett, W., Zolotovskaya, S., & Rafailov, E. U. (2010). Ultrashort-pulse lasers passively mode locked by quantum-dot-based saturable absorbers. Progress in Quantum Electronics, 34(1), 1-45. https://doi.org/10.1016/j.pquantelec.2009.11.001

Vancouver

Lagatsky AA, Leburn CG, Brown CTA, Sibbett W, Zolotovskaya S, Rafailov EU. Ultrashort-pulse lasers passively mode locked by quantum-dot-based saturable absorbers. Progress in Quantum Electronics. 2010 Jan;34(1):1-45. Epub 2009 Dec 4. doi: 10.1016/j.pquantelec.2009.11.001

Author

Lagatsky, A. A. ; Leburn, C. G. ; Brown, C. T. A. et al. / Ultrashort-pulse lasers passively mode locked by quantum-dot-based saturable absorbers. In: Progress in Quantum Electronics. 2010 ; Vol. 34, No. 1. pp. 1-45.

Bibtex

@article{927d66bbc63b4290891efa1f729dcf28,
title = "Ultrashort-pulse lasers passively mode locked by quantum-dot-based saturable absorbers",
abstract = "Some key recent achievements in the development of novel saturable absorbers that are based on semiconductor quantum-dot (QD) structures for the passive mode locking of near-infrared lasers are outlined. These are group IV–VI semiconductor nanoparticles (quantum dots) in glass matrices and self-assembled semiconductor quantum dots (group III–V) grown on semiconductor mirrors (QD-SESAMs). The performance of solid-state (Yb3+, Nd3+ and Cr4+-based), Yb-doped fibre and monolithically integrated semiconductor lasers has been described within the context of ultrashort-pulse generation using these types of QD-based modulators. Particular attention has been paid to the nonlinear parameters of the QD-based saturable absorbers that determine the quality of the mode locking in such laser systems.",
keywords = "Mode locking, Solid-state lasers, Quantum-dots",
author = "Lagatsky, {A. A.} and Leburn, {C. G.} and Brown, {C. T. A.} and W. Sibbett and Svetlana Zolotovskaya and Rafailov, {E. U.}",
year = "2010",
month = jan,
doi = "10.1016/j.pquantelec.2009.11.001",
language = "English",
volume = "34",
pages = "1--45",
journal = "Progress in Quantum Electronics",
issn = "0079-6727",
publisher = "Elsevier Limited",
number = "1",

}

RIS

TY - JOUR

T1 - Ultrashort-pulse lasers passively mode locked by quantum-dot-based saturable absorbers

AU - Lagatsky, A. A.

AU - Leburn, C. G.

AU - Brown, C. T. A.

AU - Sibbett, W.

AU - Zolotovskaya, Svetlana

AU - Rafailov, E. U.

PY - 2010/1

Y1 - 2010/1

N2 - Some key recent achievements in the development of novel saturable absorbers that are based on semiconductor quantum-dot (QD) structures for the passive mode locking of near-infrared lasers are outlined. These are group IV–VI semiconductor nanoparticles (quantum dots) in glass matrices and self-assembled semiconductor quantum dots (group III–V) grown on semiconductor mirrors (QD-SESAMs). The performance of solid-state (Yb3+, Nd3+ and Cr4+-based), Yb-doped fibre and monolithically integrated semiconductor lasers has been described within the context of ultrashort-pulse generation using these types of QD-based modulators. Particular attention has been paid to the nonlinear parameters of the QD-based saturable absorbers that determine the quality of the mode locking in such laser systems.

AB - Some key recent achievements in the development of novel saturable absorbers that are based on semiconductor quantum-dot (QD) structures for the passive mode locking of near-infrared lasers are outlined. These are group IV–VI semiconductor nanoparticles (quantum dots) in glass matrices and self-assembled semiconductor quantum dots (group III–V) grown on semiconductor mirrors (QD-SESAMs). The performance of solid-state (Yb3+, Nd3+ and Cr4+-based), Yb-doped fibre and monolithically integrated semiconductor lasers has been described within the context of ultrashort-pulse generation using these types of QD-based modulators. Particular attention has been paid to the nonlinear parameters of the QD-based saturable absorbers that determine the quality of the mode locking in such laser systems.

KW - Mode locking

KW - Solid-state lasers

KW - Quantum-dots

U2 - 10.1016/j.pquantelec.2009.11.001

DO - 10.1016/j.pquantelec.2009.11.001

M3 - Journal article

VL - 34

SP - 1

EP - 45

JO - Progress in Quantum Electronics

JF - Progress in Quantum Electronics

SN - 0079-6727

IS - 1

ER -