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    Rights statement: Rights statement: Copyright 2020 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics, 128 (3), 2020 and may be found at https://aip.scitation.org/doi/10.1063/5.0011703

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Understanding the effect of confinement in scanning spreading resistance microscopy measurements

Research output: Contribution to journalJournal article

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Understanding the effect of confinement in scanning spreading resistance microscopy measurements. / Pandey, K.; Paredis, K.; Robson, A.J.; Vandervorst, W.

In: Journal of Applied Physics, Vol. 128, No. 3, 034303, 21.07.2020.

Research output: Contribution to journalJournal article

Harvard

Pandey, K, Paredis, K, Robson, AJ & Vandervorst, W 2020, 'Understanding the effect of confinement in scanning spreading resistance microscopy measurements', Journal of Applied Physics, vol. 128, no. 3, 034303. https://doi.org/10.1063/5.0011703

APA

Pandey, K., Paredis, K., Robson, A. J., & Vandervorst, W. (2020). Understanding the effect of confinement in scanning spreading resistance microscopy measurements. Journal of Applied Physics, 128(3), [034303]. https://doi.org/10.1063/5.0011703

Vancouver

Pandey K, Paredis K, Robson AJ, Vandervorst W. Understanding the effect of confinement in scanning spreading resistance microscopy measurements. Journal of Applied Physics. 2020 Jul 21;128(3). 034303. https://doi.org/10.1063/5.0011703

Author

Pandey, K. ; Paredis, K. ; Robson, A.J. ; Vandervorst, W. / Understanding the effect of confinement in scanning spreading resistance microscopy measurements. In: Journal of Applied Physics. 2020 ; Vol. 128, No. 3.

Bibtex

@article{3a32e42ef823462ba7f5cb4dbec726a9,
title = "Understanding the effect of confinement in scanning spreading resistance microscopy measurements",
abstract = "Scanning spreading resistance microscopy (SSRM) is a powerful technique for quantitative two-and three-dimensional carrier profiling of semiconductor devices with sub-nm spatial resolution. However, considering the sub-10 nm dimensions of advanced devices and the introduction of three-dimensional architectures like fin field effect transistor (FinFET) and nanowires, the measured spreading resistance is easily impacted by parasitic series resistances present in the system. The limited amount of material, the presence of multiple interfaces, and confined current paths may increase the total resistance measured by SSRM beyond the expected spreading resistance, which can ultimately lead to an inaccurate carrier quantification. Here, we report a simulation assisted experimental study to identify the different parameters affecting the SSRM measurements in confined volumes. Experimentally, the two-dimensional current confinement is obtained by progressively thinning down uniformly doped blanket silicon on insulator wafers using scalpel SSRM. The concomitant SSRM provides detailed electrical information as a function of depth up to oxide interface. We show that the resistance is most affected by the interface traps in case of a heterogeneous sample, followed by the intrinsic resistance of the current carrying paths. Furthermore, we show that accurate carrier quantification is ensured for typical back contact distances of 1 μm if the region of interest is at least nine times larger than the probe radius. {\textcopyright} 2020 Author(s).",
keywords = "Computer architecture, Electric resistance, FinFET, Image segmentation, Silicon on insulator technology, Confined current path, Fin field-effect transistors, Intrinsic resistance, Parasitic series resistance, Scanning spreading resistance microscopy, Silicon on insulator wafers, Spreading resistance, Three-dimensional architecture, Silicon wafers",
author = "K. Pandey and K. Paredis and A.J. Robson and W. Vandervorst",
year = "2020",
month = jul,
day = "21",
doi = "10.1063/5.0011703",
language = "English",
volume = "128",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "3",

}

RIS

TY - JOUR

T1 - Understanding the effect of confinement in scanning spreading resistance microscopy measurements

AU - Pandey, K.

AU - Paredis, K.

AU - Robson, A.J.

AU - Vandervorst, W.

PY - 2020/7/21

Y1 - 2020/7/21

N2 - Scanning spreading resistance microscopy (SSRM) is a powerful technique for quantitative two-and three-dimensional carrier profiling of semiconductor devices with sub-nm spatial resolution. However, considering the sub-10 nm dimensions of advanced devices and the introduction of three-dimensional architectures like fin field effect transistor (FinFET) and nanowires, the measured spreading resistance is easily impacted by parasitic series resistances present in the system. The limited amount of material, the presence of multiple interfaces, and confined current paths may increase the total resistance measured by SSRM beyond the expected spreading resistance, which can ultimately lead to an inaccurate carrier quantification. Here, we report a simulation assisted experimental study to identify the different parameters affecting the SSRM measurements in confined volumes. Experimentally, the two-dimensional current confinement is obtained by progressively thinning down uniformly doped blanket silicon on insulator wafers using scalpel SSRM. The concomitant SSRM provides detailed electrical information as a function of depth up to oxide interface. We show that the resistance is most affected by the interface traps in case of a heterogeneous sample, followed by the intrinsic resistance of the current carrying paths. Furthermore, we show that accurate carrier quantification is ensured for typical back contact distances of 1 μm if the region of interest is at least nine times larger than the probe radius. © 2020 Author(s).

AB - Scanning spreading resistance microscopy (SSRM) is a powerful technique for quantitative two-and three-dimensional carrier profiling of semiconductor devices with sub-nm spatial resolution. However, considering the sub-10 nm dimensions of advanced devices and the introduction of three-dimensional architectures like fin field effect transistor (FinFET) and nanowires, the measured spreading resistance is easily impacted by parasitic series resistances present in the system. The limited amount of material, the presence of multiple interfaces, and confined current paths may increase the total resistance measured by SSRM beyond the expected spreading resistance, which can ultimately lead to an inaccurate carrier quantification. Here, we report a simulation assisted experimental study to identify the different parameters affecting the SSRM measurements in confined volumes. Experimentally, the two-dimensional current confinement is obtained by progressively thinning down uniformly doped blanket silicon on insulator wafers using scalpel SSRM. The concomitant SSRM provides detailed electrical information as a function of depth up to oxide interface. We show that the resistance is most affected by the interface traps in case of a heterogeneous sample, followed by the intrinsic resistance of the current carrying paths. Furthermore, we show that accurate carrier quantification is ensured for typical back contact distances of 1 μm if the region of interest is at least nine times larger than the probe radius. © 2020 Author(s).

KW - Computer architecture

KW - Electric resistance

KW - FinFET

KW - Image segmentation

KW - Silicon on insulator technology

KW - Confined current path

KW - Fin field-effect transistors

KW - Intrinsic resistance

KW - Parasitic series resistance

KW - Scanning spreading resistance microscopy

KW - Silicon on insulator wafers

KW - Spreading resistance

KW - Three-dimensional architecture

KW - Silicon wafers

U2 - 10.1063/5.0011703

DO - 10.1063/5.0011703

M3 - Journal article

VL - 128

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

M1 - 034303

ER -