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Vacancies and defect levels in III-V semiconductors

Research output: Contribution to journalJournal article

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  • H. A. Tahini
  • A. Chroneos
  • S. T. Murphy
  • U. Schwingenschloegl
  • R. W. Grimes
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Article number063517
<mark>Journal publication date</mark>14/08/2013
<mark>Journal</mark>Journal of Applied Physics
Issue number6
Volume114
Number of pages9
Publication StatusPublished
<mark>Original language</mark>English

Abstract

Using electronic structure calculations, we systematically investigate the formation of vacancies in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb), for a range of charges (-3