Research output: Contribution to Journal/Magazine › Journal article › peer-review
| Article number | 063517 |
|---|---|
| <mark>Journal publication date</mark> | 14/08/2013 |
| <mark>Journal</mark> | Journal of Applied Physics |
| Issue number | 6 |
| Volume | 114 |
| Number of pages | 9 |
| Publication Status | Published |
| <mark>Original language</mark> | English |
Using electronic structure calculations, we systematically investigate the formation of vacancies in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb), for a range of charges (-3