Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Vacancies and defect levels in III-V semiconductors
AU - Tahini, H. A.
AU - Chroneos, A.
AU - Murphy, S. T.
AU - Schwingenschloegl, U.
AU - Grimes, R. W.
PY - 2013/8/14
Y1 - 2013/8/14
N2 - Using electronic structure calculations, we systematically investigate the formation of vacancies in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb), for a range of charges (-3
AB - Using electronic structure calculations, we systematically investigate the formation of vacancies in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb), for a range of charges (-3
KW - GENERALIZED GRADIENT APPROXIMATION
KW - AB-INITIO
KW - ELECTRONIC-STRUCTURE
KW - GALLIUM-ARSENIDE
KW - SELF-DIFFUSION
KW - COMPOUND SEMICONDUCTORS
KW - GAAS
KW - ANTIMONIDE
KW - IDENTIFICATION
KW - PHOSPHIDE
U2 - 10.1063/1.4818484
DO - 10.1063/1.4818484
M3 - Journal article
VL - 114
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 6
M1 - 063517
ER -