MSI: 3D structure and interfaces in compound semiconductors. Understanding links between electronic properties, defects, morphology and growth - Research Portal | Lancaster University

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MSI: 3D structure and interfaces in compound semiconductors. Understanding links between electronic properties, defects, morphology and growth

Project: Research

Status	Finished
Effective start/end date	1/08/19 → 31/01/21

Funding

Engineering and Physical Sciences Research Council: £93,021.00

Kolosov, Oleg (Principal Investigator)

Research outputs

Nanoscale Thermal Transport in 2D Nanostructures from Cryogenic to Room Temperature
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Efficient heating of single-molecule junctions for thermoelectric studies at cryogenic temperatures
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Nanoscale mapping of thermal and mechanical properties of bare and metal-covered self-assembled block copolymer thin films
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Direct nanoscale mapping of open circuit voltages at local back surface fields for PERC solar cells
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Quantifying thermal transport in buried semiconductor nanostructures via Cross-Sectional Scanning Thermal Microscopy
Research output: Contribution to Journal/Magazine › Journal article › peer-review
3D Nanoscale Morphology and Local Physical Properties of Li/Na-Ion-Battery Solid-Electrolyte-Interphase via Scanning Probe 3D Operando Nanorheology
Research output: Contribution to conference - Without ISBN/ISSN › Conference paper
Nanoarchitecture factors of solid – electrolyte interphase formation via 3D nano-rheology microscopy and surface force-distance spectroscopy
Research output: Contribution to Journal/Magazine › Journal article › peer-review