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  1. GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface

    Marshall, A., Craig, A., Reyner, C. J. & Huffaker, D. L., 05/2015, In: Infrared Physics and Technology. 70, p. 168-170 3 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review