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  1. Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation

    Mamor, M., Pipeleers, B., Auret, F. D., Maes, J., Hayne, M., Moshchalkov, V. V. & Vantomme, A., 15/12/2003, In: Materials Science and Engineering: B . 105, 1-3, p. 179-183 5 p.

    Research output: Contribution to journalJournal articlepeer-review

  2. Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy

    Zhuang, Q., Yoon, S. F., Zheng, H. Q. & Yuan, K. H., 2000, In: Journal of Crystal Growth. 216, 1-4, p. 57-61 5 p.

    Research output: Contribution to journalJournal articlepeer-review