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Simulations of resonant tunneling through InAs/AlSb heterostructures for ULTRARAM™ memory
Lane, D. (Creator), Hayne, M. (Creator), Lancaster University, 2021, 10.17635/lancaster/researchdata/467
Dataset
ULTRARAM™: towards the development of a III-V semiconductor, non-volatile, random-access memory
Lane, D. (Creator), Hayne, M. (Creator), Hodgson, P. (Creator), Lancaster University, 2021, 10.17635/lancaster/researchdata/420
Dataset

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