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Research

Professor Anthony Krier

Emeritus Professor

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  1. 2003
  2. Published

    The influence of melt purification and structure defects on mid-infrared light emitting diodes. .

    Krier, A. & Sherstnev, V. V., 7/07/2003, In: Journal of Physics D: Applied Physics. 36, 13, p. 1484-1488 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Mid-infrared whispering gallery mode ring lasers and LEDs. .

    Wright, D. A., Sherstnev, V. V., Krier, A., Monakhov, A. M. & Hill, G., 08/2003, In: IEE Proceedings - Optoelectronics. 150, 4, p. 314-317 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Double-heterojunction photodetector for midinfrared applications: theoretical model and experimental results.

    Chakrabarti, P., Krier, A. & Morgan, A. F., 1/09/2003, In: Optical Engineering. 42, 9, p. 2614-2623 10 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Analysis and simulation of a mid-infrared P+-InAs0.55Sb0.15P0.30/n(0)-InAs0.89Sb0.11/N+-InAs0.55Sb0.15P0.30 double heterojunction photodetector grown by LPE. .

    Chakrabarti, P., Krier, A. & Morgan, A. F., 1/10/2003, In: IEEE Transactions on Electron Devices. 50, 10, p. 2049-2058 10 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. 2004
  7. Published

    Structural modifications of InAs based materials for mid-infrared optoelectronic devices

    Nohavica, D. & Krier, A., 2004, ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems. Osvald, J. & Hascik, S. (eds.). New York: IEEE, p. 203-206 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  8. Published

    The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. .

    Monakhov, A., Krier, A. & Sherstnev, V. V., 03/2004, In: Semiconductor Science and Technology. 19, 3, p. 480-484 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. .

    Chakrabarti, P., Krier, A., Huang, X. L. & Fenge, P., 5/05/2004, In: IEEE Electron Device Letters. 25, 5, p. 283-285 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. .

    Moiseev, K. D., Krier, A. & Yakovlev, Y. P., 08/2004, In: Journal of Electronic Materials. 33, 8, p. 867-872 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    Fundamental physics and practical realisation of mid-infrared photodetectors.

    Krier, A., Chakrabarti, P., Gao, H., Mao, Y., Huang, X-L. & Sherstnev, V. V., 10/2004, In: Proceedings of SPIE. 5564, p. 92-104 13 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  12. 2005
  13. Published

    InAs whispering gallery mode lasers for the mid-infrared spectral range. .

    Sherstnev, V., Monakhov, A., Krier, A. & Wright, D. A., 02/2005, In: IEE Proceedings - Optoelectronics. 152, 1, p. 1-5 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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