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Professor Anthony Krier

Emeritus Professor

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  1. 2006
  2. Published

    Mid-infrared diode lasers for free space optical communications

    Yin, M., Krier, A., Krier, S., Jones, R. & Carrington, P., 2006, Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Components Architectures for Microwave Systems and Displays. Sjoqvist, LJ., Wilson, RA. & Merlet, TJ. (eds.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. U101-U106 6 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  3. 2005
  4. Published

    Semiconductor WGM lasers for the mid-IR spectral range

    Sherstnev, V. V., Monakhov, A. M., Astakhova, A. P., Kislyakova, A. Y., Yakovlev, Y. P., Averkiev, N. S., Krier, A. & Hill, G., 09/2005, In: Semiconductors. 39, 9, p. 1087-1092 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy. .

    Krier, A. & Huang, X. L., 7/02/2005, In: Applied Physics Letters. 86, 6, p. 061113

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    InAs whispering gallery mode lasers for the mid-infrared spectral range. .

    Sherstnev, V., Monakhov, A., Krier, A. & Wright, D. A., 02/2005, In: IEE Proceedings - Optoelectronics. 152, 1, p. 1-5 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. 2004
  8. Published

    Fundamental physics and practical realisation of mid-infrared photodetectors.

    Krier, A., Chakrabarti, P., Gao, H., Mao, Y., Huang, X-L. & Sherstnev, V. V., 10/2004, In: Proceedings of SPIE. 5564, p. 92-104 13 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. .

    Moiseev, K. D., Krier, A. & Yakovlev, Y. P., 08/2004, In: Journal of Electronic Materials. 33, 8, p. 867-872 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. .

    Chakrabarti, P., Krier, A., Huang, X. L. & Fenge, P., 5/05/2004, In: IEEE Electron Device Letters. 25, 5, p. 283-285 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. .

    Monakhov, A., Krier, A. & Sherstnev, V. V., 03/2004, In: Semiconductor Science and Technology. 19, 3, p. 480-484 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  12. Published

    Structural modifications of InAs based materials for mid-infrared optoelectronic devices

    Nohavica, D. & Krier, A., 2004, ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems. Osvald, J. & Hascik, S. (eds.). New York: IEEE, p. 203-206 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  13. 2003
  14. Published

    Analysis and simulation of a mid-infrared P+-InAs0.55Sb0.15P0.30/n(0)-InAs0.89Sb0.11/N+-InAs0.55Sb0.15P0.30 double heterojunction photodetector grown by LPE. .

    Chakrabarti, P., Krier, A. & Morgan, A. F., 1/10/2003, In: IEEE Transactions on Electron Devices. 50, 10, p. 2049-2058 10 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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