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Research

Professor Anthony Krier

Emeritus Professor

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  1. 2002
  2. Published

    Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. .

    Huang, X. L., Labadi, Z., Hammiche, A. & Krier, A., 7/12/2002, In: Journal of Physics D: Applied Physics. 35, 23, p. 3091-3095 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Mid-infrared electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. .

    Krier, A. & Huang, X. L., 11/2002, In: Physica E: Low-dimensional Systems and Nanostructures. 15, 3, p. 159-163 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Tuning characteristics of InAsSb continuous-wave lasers. .

    Sherstnev, V., Krier, A., Popov, A. & Werle, P., 20/05/2002, In: Applied Physics Letters. 80, 20, p. 3676-3678 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Optical switching in midinfrared light-emitting diodes .

    Krier, A., Sherstnev, V. V., Gao, H. H., Monakhov, A. M. & Hill, G., 22/04/2002, In: Applied Physics Letters. 80, 16, p. 2821-2823 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction.

    Moiseev, K. D., Krier, A., Mikhailova, M. P. & Yakovlev, Y. P., 7/04/2002, In: Journal of Physics D: Applied Physics. 35, 7, p. 631-636 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    High tunability and superluminescence in InAs mid-infrared light emitting diodes. .

    Sherstnev, V. V., Krier, A. & Hill, G., 7/02/2002, In: Journal of Physics D: Applied Physics. 35, 3, p. 196-198 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    General theory of multi-phase melt crystallization. .

    Charykov, N. A., Sherstnev, V. V. & Krier, A., 02/2002, In: Journal of Crystal Growth. 234, 4, p. 762-772 11 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy

    Krier, A. & Huang, X. L., 2002, Physics and Simulation of Optoelectronic Devices X. Blood, P., Osinski, M. & Arakawa, Y. (eds.). Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING, p. 70-78 9 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  10. 2001
  11. Published

    Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures. .

    Moiseev, K. D., Krier, A. & Yakovlev, Y. P., 15/10/2001, In: Journal of Applied Physics. 90, 8, p. 3988-3992 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  12. Published

    Liquid phase epitaxial growth and morphology of InSb quantum dots. .

    Krier, A., Huang, X. L. & Hammiche, A., 21/03/2001, In: Journal of Physics D: Applied Physics. 34, 6, p. 874-878 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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