Home > Research > Researchers > Dr Chen Wang > Publications

Dr Chen Wang

Formerly at Lancaster University

  1. 2018
  2. Published

    Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography

    Durrani, Z. A. K., Jones, M. E., Abualnaja, F., Wang, C., Kaestner, M., Lenk, S., Lenk, C., Rangelow, I. W. & Andreev, A., 14/10/2018, In: Journal of Applied Physics. 124, 14, 11 p., 144502.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  3. Published

    Quantum Confinement in Security Elements

    McGrath, T., Bernardo Gavito, R., Bagci, I. E., Wang, C., Astbury, B., Young, R. J. & Roedig, U., 9/09/2018.

    Research output: Contribution to conference - Without ISBN/ISSN Poster

  4. Published

    Nanofabrication by field-emission scanning probe lithography and cryogenic plasma etching

    Lenk, C., Hofmann, M., Lenk, S., Kaestner, M., Ivanov, T., Krivoshapkina, Y., Nechepurenko, D., Volland, B., Holz, M., Ahmad, A., Reum, A., Wang, C., Jones, M. E., Durrani, Z. A. K. & Rangelow, I. W., 15/05/2018, In: Microelectronic Engineering. 192, p. 77-82 6 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  5. 2017
  6. Published

    Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition

    Durrani, Z. A. K., Jones, M. E., Wang, C., Scotuzzi, M. & Hagen, C. W., 24/11/2017, In: Nanotechnology. 28, 47, 10 p., 474002.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  7. Published

    Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors

    Durrani, Z. A. K., Jones, M. E., Wang, C., Liu, D. & Griffiths, J., 23/02/2017, In: Nanotechnology. 28, 12, 11 p., 125208.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  8. 2016
  9. Published

    Pattern-generation and pattern-transfer for single-digit nano devices

    Rangelow, I. W., Ahmad, A., Ivanov, T., Kaestner, M., Krivoshapkina, Y., Angelov, T., Lenk, S., Lenk, C., Ishchuk, V., Hofmann, M., Nechepurenko, D., Atanasov, I., Volland, B., Guliyev, E., Durrani, Z. A. K., Jones, M. E., Wang, C., Liu, D., Reum, A., Holz, M., & 6 othersNikolov, N., Majstrzyk, W., Gotszalk, T., Staaks, D., Dallorto, S. & Olynick, D. L., 3/11/2016, In: Journal of Vacuum Science and Technology B. 34, 6, 13 p., 06K202.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  10. 2015
  11. Published

    Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

    Llobet, J., Krali, E., Wang, C., Arbiol, J., Jones, M. E., Perez-Murano, F. & Durrani, Z. A. K., 30/11/2015, In: Applied Physics Letters. 107, 22, 5 p., 223501.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  12. Published

    Single-electron and quantum confinement limits in length-scaled silicon nanowires

    Wang, C., Jones, M. E. & Durrani, Z. A. K., 31/07/2015, In: Nanotechnology. 26, 30, 13 p., 305203.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

Back to top