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Dr Manoj Kesaria

Formerly at Lancaster University

  1. Published

    The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy

    Anyebe, E., Zhuang, Q., Kesaria, M. & Krier, A., 08/2014, In: Semiconductor Science and Technology. 29, 8, 7 p., 085010.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  2. Published

    A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE

    Anyebe, E. A., Kesaria, M., Sanchez, A. M. & Zhuang, Q., 1/07/2020, In: Applied Physics A. 126, 6, 8 p., 427.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  3. Published

    High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

    Bhasker, H. P., Dhar, S., Kesaria, M., Sain, A. & Shivaprasad, S. M., 24/09/2012, In: Applied Physics Letters. 101, 13, p. 132109-132113 5 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  4. Published

    Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy

    Bhasker, H. P., Thakur, V., Kesaria, M., Shivaprasad, S. M. & Dhar, S., 2014, In: AIP Conference Proceedings. 1583, 252.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  5. Published

    Peculiarities of the hydrogenated In(AsN) alloy

    Birindelli, S., Kesaria, M., Giubertoni, D., Pettinari, G., Velichko, A. V., Zhuang, Q., Krier, A., Patane, A., Polimeni, A. & Capizzi, M., 14/09/2015, In: Semiconductor Science and Technology. 30, p. 105030 10 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  6. Published

    Effect of N2* and N on GaN nanocolumns grown on Si (111) by molecular beam epitaxy

    Debnath, A., Gandhi, J. S., Kesaria, M., Pillai, R., Starikov, D. & Bensaoula, A., 14/03/2016, In: Journal of Applied Physics. 119, 10, 7 p., 104302.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  7. Published

    Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

    Di Paola, D. M., Kesaria, M., Makarovsky, O., Velichko, A. V., Eaves, L., Mori, N., Krier, A. & Patane, A., 18/08/2016, In: Scientific Reports. 6, 8 p., 32039.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  8. Published

    Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode

    Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M., Makarovsky, O., Krier, A. & Patanè, A., 6/04/2020, In: Applied Physics Letters. 116, 14, 5 p., 142108.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  9. Published

    InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs

    Keen, J., Lane, D., Kesaria, M., Marshall, A. R. J. & Krier, A., 30/01/2018, In: Journal of Physics D: Applied Physics. 51, 7, 9 p., 075103.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  10. Published

    Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared

    Keen, J., Repiso Menendez, E., Lu, Q., Kesaria, M., Marshall, A. R. J. & Krier, A., 09/2018, In: Infrared Physics and Technology. 93, p. 375-380 6 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

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