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Professor Manus Hayne SFHEA

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  1. Published

    Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

    Harrison, S., Young, M., Hodgson, P. D., Young, R. J., Hayne, M., Danos, E., Schliwa, A., Strittmatter, A., Lenz, A., Eisele, H., Pohl, U. & Bimberg, D., 2/02/2016, In: Physical review B. 93, 9 p., 085302.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    High-accuracy analysis of nanoscale semiconductor layers using beam-exit Ar-ion polishing and scanning probe microscopy

    Robson, A., Grishin, I., Young, R., Sanchez, A. M., Kolosov, O. & Hayne, M., 2013, In: ACS Applied Materials and Interfaces. 5, 8, p. 3241-3245 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    High-field magnetoexcitons in unstrained GaAs/AlxGa1-xAs quantum dots

    Sidor, Y., Partoens, B., Peeters, F. M., Schildermans, N., Hayne, M., Moshchalkov, V. V., Rastelli, A. & Schmidt, O. G., 27/04/2006, In: Physical review B. 73, 15, 8 p., 155334.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    High-field magneto-photoluminescence of semiconductor nanostructures

    Hayne, M. & Bansal, B., 05/2012, In: Luminescence. 27, 3, p. 179-196 18 p.

    Research output: Contribution to Journal/Magazine › Literature review › peer-review

  5. Published

    High-field spin-polarization transition in the Landau bands of quasi-2D electron gases with strong lateral modulation

    Petit, F., Sfaxi, L., Lelarge, F., Cavanna, A., Hayne, M. & Etienne, B., 20/04/1997, In: EPL. 38, 3, p. 225-230 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    High-field Zeeman contribution to the trion binding energy

    Vanhoucke, T., Hayne, M., Henini, M. & Moshchalkov, V. V., 15/01/2002, In: Physical review B. 65, 4, p. - 4 p., 041307.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Hole coupling in stacked self-assembled InP quantum dots

    Hayne, M., Provoost, R., Zundel, M. K., Manz, Y. M., Eberl, K. & Moshchalkov, V. V., 02/2000, In: Physica E: Low-dimensional Systems and Nanostructures. 6, 1-4, p. 436-439 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings

    Hodgson, P., Young, R., Ahmad Kamarudin, M., Zhuang, Q. & Hayne, M., 28/10/2013, In: Physical review B. 88, 15, 7 p., 155322.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Hydrogenation of GaSb/GaAs quantum rings

    Hodgson, P., Hayne, M., Ahmad Kamarudin, M., Zhuang, Q., Birindelli, S. & Capizzi, M., 28/08/2014, In: Applied Physics Letters. 105, 5 p., 081907.

    Research output: Contribution to Journal/Magazine › Journal article

  10. Published

    Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 um laser applications srudied by magneto-photoluminescence.

    Cornet, C., Levallois, C., Caroff, P., Folliot, H., Labbé, C., Even, J., Le Corre, A., Loualiche, S., Hayne, M. & Moshchalkov, V. V., 30/11/2005, In: Applied Physics Letters. 87, 23, p. - 3 p., 233111.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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