Home > Research > Researchers > Professor Manus Hayne > Publications

Research

Professor Manus Hayne SFHEA

Professor

61 - 70 out of 107Page size: 10
RSS feed of this list
Sort by: Title
  1. Published

    Hole coupling in stacked self-assembled InP quantum dots

    Hayne, M., Provoost, R., Zundel, M. K., Manz, Y. M., Eberl, K. & Moshchalkov, V. V., 02/2000, In: Physica E: Low-dimensional Systems and Nanostructures. 6, 1-4, p. 436-439 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    High-field Zeeman contribution to the trion binding energy

    Vanhoucke, T., Hayne, M., Henini, M. & Moshchalkov, V. V., 15/01/2002, In: Physical review B. 65, 4, p. - 4 p., 041307.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    High-field spin-polarization transition in the Landau bands of quasi-2D electron gases with strong lateral modulation

    Petit, F., Sfaxi, L., Lelarge, F., Cavanna, A., Hayne, M. & Etienne, B., 20/04/1997, In: EPL. 38, 3, p. 225-230 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    High-field magneto-photoluminescence of semiconductor nanostructures

    Hayne, M. & Bansal, B., 05/2012, In: Luminescence. 27, 3, p. 179-196 18 p.

    Research output: Contribution to Journal/Magazine › Literature review › peer-review

  5. Published

    High-field magnetoexcitons in unstrained GaAs/AlxGa1-xAs quantum dots

    Sidor, Y., Partoens, B., Peeters, F. M., Schildermans, N., Hayne, M., Moshchalkov, V. V., Rastelli, A. & Schmidt, O. G., 27/04/2006, In: Physical review B. 73, 15, 8 p., 155334.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    High-accuracy analysis of nanoscale semiconductor layers using beam-exit Ar-ion polishing and scanning probe microscopy

    Robson, A., Grishin, I., Young, R., Sanchez, A. M., Kolosov, O. & Hayne, M., 2013, In: ACS Applied Materials and Interfaces. 5, 8, p. 3241-3245 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

    Harrison, S., Young, M., Hodgson, P. D., Young, R. J., Hayne, M., Danos, E., Schliwa, A., Strittmatter, A., Lenz, A., Eisele, H., Pohl, U. & Bimberg, D., 2/02/2016, In: Physical review B. 93, 9 p., 085302.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy

    Smakman, E. P., Garleff, J. K., Young, R. J., Hayne, M., Rambabu, P. & Koenraad, P. M., 2/04/2012, In: Applied Physics Letters. 100, 14, p. - 3 p., 142116.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells

    Hodgson, P., Hayne, M., Robson, A., Zhuang, Q. & Danos, E., 28/01/2016, In: Journal of Applied Physics. 119, 4, 7 p., 044305.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer.

    Ahmad Kamarudin, M., Hayne, M., Zhuang, Q. D., Kolosov, O., Nuytten, T., Moshchalkov, V. V. & Dinelli, F., 26/01/2010, In: Journal of Physics D: Applied Physics. 43, 6, p. 065402

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

Previous 1...3 4 5 6 7 8 9 10 11 Next

Back to top