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Professor Manus Hayne SFHEA

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  1. Published

    Exciton confinement in InAs/InP quantum wires and quantum wells in the presence of a magnetic field.

    Sidor, Y., Partoens, B., Peeters, F. M., Maes, J., Hayne, M., Fuster, D., Gonzalez, Y., Gonzalez, L. & Moshchalkov, V. V., 19/11/2007, In: Physical review B. 76, 195320, p. 1-9 10 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions

    Hayne, M., USHER, A., HARRIS, J. J. & FOXON, C. T., 15/10/1992, In: Physical review B. 46, 15, p. 9515-9519 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Erratum: Electron wave-function spillover in self-assembled InAs/InP quantum wires (vol 70, art no 155311, 2004)

    Fuster, D., Garcia, J. M., Gonzalez, L., Gonzalez, Y., Hayne, M., Maes, J., Moshchalkov, V. V., Partoens, B., Peeters, F. M. & Sidor, Y., 12/11/2007, In: Physical review B. 76, 1 p., 199902(E).

    Research output: Contribution to Journal/Magazine › Journal article

  4. Published

    Energy levels of negatively charged excitons in high magnetic fields

    Vanhoucke, T., Hayne, M., Moshchalkov, V. V. & Henini, M., 2000, In: Solid State Communications. 115, 8, p. 403-406 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Energy level diagram of X- in high magnetic fields

    Vanhoucke, T., Hayne, M., Moshchalkov, V. V. & Henini, M., 1/12/2000, Proceedings of the 8th International Symposium Nanostructures: Physics and Technology. Alferov, ZH. & Esaki, L. (eds.). p. 252-255 4 p. (Proceedings of the 8th International Symposium Nanostructures: Physics and Technology).

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  6. Published

    Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots

    Badcock, T. J., Hayne, M., Hopkinson, M., Jantsch, W., Liu, H. Y., Moshchalkov, V. V., Mowbray, D. J., Nabavi, E., Nuytten, T., Schaffler, F. & Steer, M. J., 10/04/2007, Physics of Semiconductors, Pts A and B. American Institute of Physics, Vol. 893. p. 951-952 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter

  7. Published

    Electron wave-function spillover in self-assembled InAs/InP quantum wires

    Maes, J., Hayne, M., Sidor, Y., Partoens, B., Peeters, F. M., Gonzalez, Y., Gonzalez, L., Fuster, D., Garcia, J. M. & Moshchalkov, V. V., 15/10/2004, In: Physical review B. 70, 15, 7 p., 155311.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Electron localization by self-assembled GaSb/GaAs quantum dots.

    Hayne, M., Bersier, S., Maes, J., Moshchalkov, V. V., Schliwa, A., Muller-Kirsch, L., Kapteyn, C., Heitz, R. & Bimberg, D., 16/06/2003, In: Applied Physics Letters. 82, 24, p. 4355-4357 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Electron and hole confinement in stacked self-assembled InP quantum dots

    Hayne, M., Provoost, R., Zundel, M. K., Manz, Y. M., Eberl, K. & Moshchalkov, V. V., 15/10/2000, In: Physical review B. 62, 15, p. 10324-10328 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Electron and hole confinement in stacked self-assembled InP dots of different sizes

    Hayne, M., Maes, J., Manz, Y. M., Schmidt, O. G., Eberl, K. & Moshchalkov, V. V., 03/2001, In: physica status solidi (b). 224, 1, p. 31-35 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation

    Mamor, M., Pipeleers, B., Auret, F. D., Maes, J., Hayne, M., Moshchalkov, V. V. & Vantomme, A., 15/12/2003, In: Materials Science and Engineering: B . 105, 1-3, p. 179-183 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  12. Published

    Efficient optical coupling to semiconductor quantum dots, using tunable microfluidically-formed solid immersion lenses

    Woodhead, C., Hodgson, P., Young, M., Roberts, J., Noori, Y., Hayne, M. & Young, R., 1/07/2015.

    Research output: Contribution to conference - Without ISBN/ISSN › Abstract

  13. Published

    Effective masses in high-mobility 2D electron gas structures

    Coleridge, P. T., Hayne, M., Zawadzki, P. & Sachrajda, A. S., 20/07/1996, In: Surface Science. 362, 1-3, p. 560-563 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  14. Published

    Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

    Fernández-Delgado, N., Herrera, M., Chisholm, M. F., Ahmad Kamarudin, M., Zhuang, Q., Hayne, M. & Molina, S. I., 15/02/2017, In: Applied Surface Science. 395, p. 136-139 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  15. Published

    Diamond as a magnetic field calibration probe

    Maes, J., Iakoubovskii, K., Hayne, M., Stesmans, A. & Moshchalkov, V. V., 7/04/2004, In: Journal of Physics D: Applied Physics. 37, 7, p. 1102-1106 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  16. Published

    Dependence of quantum-dot formation on substrate orientation studied by magnetophotoluminescence

    Maes, J., Hayne, M., Moshchalkov, V. V., Patane, A., Henini, M., Eaves, L. & Main, P. C., 19/08/2002, In: Applied Physics Letters. 81, 8, p. 1480-1482 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  17. Published

    Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory

    Lane, D., Hodgson, P., Potter, R. & Hayne, M., 12/05/2021, 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, p. 1-3 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  18. Published

    Defect formation in InGaAs/AlSb/InAs memory devices

    Trevisan, A., Hodgson, P., Lane, D., Hayne, M. & Koenraad, P. M., 25/05/2023, In: Journal of Vacuum Science and Technology B. 41, 4, 044001.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  19. Published

    Coulomb binding of electrons to multiply charged GaSb/GaAs self-assembled quantum dots

    Hayne, M., Maes, J., Bersier, S., Schliwa, A., Muller-Kirsch, L., Kapteyn, C., Heitz, R., Bimberg, D. & Moshchalkov, V. V., 03/2004, In: Physica E: Low-dimensional Systems and Nanostructures. 21, 2-4, p. 189-192 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  20. Published

    Control of complex quantum structures in droplet epitaxy

    Chawner, J. M. A., Chang, Y., Hodgson, P. D., Hayne, M., Robson, A. J., Sanchez, A. M. & Zhuang, Q., 13/08/2019, In: Semiconductor Science and Technology. 34, 9, 7 p., 095011.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  21. Published

    Confinement in self-assembled InAs/InP quantum wires studied by magneto-photoluminescence

    Maes, J., Hayne, M., Gonzalez, Y., Gonzalez, L., Fuster, D., Garcia, J. M. & Moshchalkov, V. V., 03/2004, In: Physica E: Low-dimensional Systems and Nanostructures. 21, 2-4, p. 261-264 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  22. Published

    Classification and control of the origin of photoluminescence from Si nanocrystals.

    Godefroo, S., Hayne, M., Jivanescu, M., Stesmans, A., Zacharias, M., Lededev, O., Van Tendeloo, G. & Moshchalkov, V. V., 2/03/2008, In: Nature Nanotechnology. 3, 3, p. 174-178 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  23. Published

    Charge separation and temperature-induced carrier migration in Ga1−x Inx N y As1− y multiple quantum wells

    Nuytten, T., Hayne, M., Bansal, B., Liu, H. Y., Hopkinson, M. & Moshchalkov, V. V., 5/07/2011, In: Physical review B. 84, 045302.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  24. Published

    Charge confinement and uniformity of stacked InP quantum dots studied by magneto-optical spectroscopy

    Maes, J., Hayne, M., Manz, Y. M., Schmidt, O. G., Eberl, K. & Moshchalkov, V. V., 03/2002, In: Physica E: Low-dimensional Systems and Nanostructures. 13, 2-4, p. 203-207 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  25. Published

    Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures

    Hodgson, P. D., Young, R. J., Kamarudin, M. A., Carrington, P. J., Krier, A., Zhuang, Q. D., Smakman, E. P., Koenraad, P. M. & Hayne, M., 21/08/2013, In: Journal of Applied Physics. 114, 7, 7 p., 073519.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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