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Professor Manus Hayne SFHEA

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  1. Published

    Efficient optical coupling to semiconductor quantum dots, using tunable microfluidically-formed solid immersion lenses

    Woodhead, C., Hodgson, P., Young, M., Roberts, J., Noori, Y., Hayne, M. & Young, R., 1/07/2015.

    Research output: Contribution to conference - Without ISBN/ISSN › Abstract

  2. Published

    Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation

    Mamor, M., Pipeleers, B., Auret, F. D., Maes, J., Hayne, M., Moshchalkov, V. V. & Vantomme, A., 15/12/2003, In: Materials Science and Engineering: B . 105, 1-3, p. 179-183 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Electron and hole confinement in stacked self-assembled InP dots of different sizes

    Hayne, M., Maes, J., Manz, Y. M., Schmidt, O. G., Eberl, K. & Moshchalkov, V. V., 03/2001, In: physica status solidi (b). 224, 1, p. 31-35 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Electron and hole confinement in stacked self-assembled InP quantum dots

    Hayne, M., Provoost, R., Zundel, M. K., Manz, Y. M., Eberl, K. & Moshchalkov, V. V., 15/10/2000, In: Physical review B. 62, 15, p. 10324-10328 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Electron localization by self-assembled GaSb/GaAs quantum dots.

    Hayne, M., Bersier, S., Maes, J., Moshchalkov, V. V., Schliwa, A., Muller-Kirsch, L., Kapteyn, C., Heitz, R. & Bimberg, D., 16/06/2003, In: Applied Physics Letters. 82, 24, p. 4355-4357 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Electron wave-function spillover in self-assembled InAs/InP quantum wires

    Maes, J., Hayne, M., Sidor, Y., Partoens, B., Peeters, F. M., Gonzalez, Y., Gonzalez, L., Fuster, D., Garcia, J. M. & Moshchalkov, V. V., 15/10/2004, In: Physical review B. 70, 15, 7 p., 155311.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots

    Badcock, T. J., Hayne, M., Hopkinson, M., Jantsch, W., Liu, H. Y., Moshchalkov, V. V., Mowbray, D. J., Nabavi, E., Nuytten, T., Schaffler, F. & Steer, M. J., 10/04/2007, Physics of Semiconductors, Pts A and B. American Institute of Physics, Vol. 893. p. 951-952 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter

  8. Published

    Energy level diagram of X- in high magnetic fields

    Vanhoucke, T., Hayne, M., Moshchalkov, V. V. & Henini, M., 1/12/2000, Proceedings of the 8th International Symposium Nanostructures: Physics and Technology. Alferov, ZH. & Esaki, L. (eds.). p. 252-255 4 p. (Proceedings of the 8th International Symposium Nanostructures: Physics and Technology).

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  9. Published

    Energy levels of negatively charged excitons in high magnetic fields

    Vanhoucke, T., Hayne, M., Moshchalkov, V. V. & Henini, M., 2000, In: Solid State Communications. 115, 8, p. 403-406 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Erratum: Electron wave-function spillover in self-assembled InAs/InP quantum wires (vol 70, art no 155311, 2004)

    Fuster, D., Garcia, J. M., Gonzalez, L., Gonzalez, Y., Hayne, M., Maes, J., Moshchalkov, V. V., Partoens, B., Peeters, F. M. & Sidor, Y., 12/11/2007, In: Physical review B. 76, 1 p., 199902(E).

    Research output: Contribution to Journal/Magazine › Journal article

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