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Dr Peter Carrington

Senior Lecturer

  1. Published

    Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings

    Carrington, P. J., Young, R. J., Hodgson, P. D., Sanchez, A. M., Hayne, M. & Krier, A., 03/2013, In: Crystal Growth and Design. 13, 3, p. 1226-1230 5 p.

    Research output: Contribution to journalJournal articlepeer-review

  2. Published

    Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

    Carrington, P. J., Montesdeoca Cardenes, D., Fujita, H., James Asirvatham, J. S., Wagener, M., Botha, J. R., Marshall, A. R. J. & Krier, A., 23/09/2016, In: Proceedings of SPIE. 9937, 7 p., 993708.

    Research output: Contribution to journalJournal articlepeer-review

  3. Published

    InSb-based quantum dot nanostructures for mid-infrared photonic devices

    Carrington, P. J., Repiso Menendez, E., Lu, Q., Fujita, H., Marshall, A. R. J., Zhuang, Q. & Krier, A., 16/09/2016, In: Proceedings of SPIE. 9919, 99190C.

    Research output: Contribution to journalJournal articlepeer-review

  4. Published

    Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates

    Carrington, P. J., Delli, E., Hodgson, P. D., Repiso, E., Craig, A., Marshall, A. & Krier, A., 20/11/2017, 30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc., p. 307-308 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

  5. Published

    Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

    Carrington, P., Delli, E., Letka, V., Bentley, M., Hodgson, P., Repiso Menendez, E., Hayton, J., Craig, A., Lu, Q., Beanland, R., Krier, A. & Marshall, A., 24/08/2020, Proceedings Volume 11503, Infrared Sensors, Devices, and Applications X. SPIE--The International Society for Optical Engineering, Vol. 11503.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

  6. Published

    Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb

    Cheetham, K. J., Carrington, P. J., Krier, A., Patel, I. I. & Martin, F. L., 01/2012, In: Semiconductor Science and Technology. 27, 1, p. - 4 p., 015004.

    Research output: Contribution to journalJournal articlepeer-review

  7. Published

    Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes

    Cheetham, K. J., Carrington, P. J., Cook, N. B. & Krier, A., 02/2011, In: Solar Energy Materials and Solar Cells. 95, 2, p. 534-537 4 p.

    Research output: Contribution to journalJournal articlepeer-review

  8. Published

    Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

    Craig, A., Carrington, P. J., Liu, H. & Marshall, A. R. J., 1/02/2016, In: Journal of Crystal Growth. 435, p. 56-61 6 p.

    Research output: Contribution to journalJournal articlepeer-review

  9. Published

    Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range.

    de la Mare, M., Carrington, P. J., Wheatley, R., Zhuang, Q., Beanland, R., Sanchez, A. M., Krier, A. & EPSRC Studentship for MDLM (Funder), 1/09/2010, In: Journal of Physics D: Applied Physics. 43, 34, p. 345103

    Research output: Contribution to journalJournal articlepeer-review

  10. Published

    MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices

    de la Mare, M., Krier, A., Zhuang, Q., Carrington, P. & Patane, A., 2011, In: Proceedings of SPIE. 7945, 79450L

    Research output: Contribution to journalJournal article

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