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Dr Peter Carrington

Senior Lecturer

  1. Published

    MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices

    de la Mare, M., Krier, A., Zhuang, Q., Carrington, P. & Patane, A., 2011, In: Proceedings of SPIE. 7945, 79450L

    Research output: Contribution to journalJournal article

  2. Published

    Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes

    Cheetham, K. J., Carrington, P. J., Cook, N. B. & Krier, A., 02/2011, In: Solar Energy Materials and Solar Cells. 95, 2, p. 534-537 4 p.

    Research output: Contribution to journalJournal articlepeer-review

  3. Published

    Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer

    Lu, Q., Montesdeoca Cardenes, D., Carrington, P. J., Marshall, A. R. J., Krier, A. & Beanland, R., 1/03/2019, In: Solar Energy Materials and Solar Cells. 191, p. 406-412 7 p.

    Research output: Contribution to journalJournal articlepeer-review

  4. Published

    Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings

    Carrington, P. J., Young, R. J., Hodgson, P. D., Sanchez, A. M., Hayne, M. & Krier, A., 03/2013, In: Crystal Growth and Design. 13, 3, p. 1226-1230 5 p.

    Research output: Contribution to journalJournal articlepeer-review

  5. Published

    InSb-based quantum dot nanostructures for mid-infrared photonic devices

    Carrington, P. J., Repiso Menendez, E., Lu, Q., Fujita, H., Marshall, A. R. J., Zhuang, Q. & Krier, A., 16/09/2016, In: Proceedings of SPIE. 9919, 99190C.

    Research output: Contribution to journalJournal articlepeer-review

  6. Published

    InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes.

    Solov'ev, V. A., Carrington, P., Zhuang, Q., Lai, K. T., Haywood, S. K., Ivanov, S. V. & Krier, A., 2008, Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 129-131 3 p. (Springer Proceedings in Physics).

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNChapter

  7. Published

    InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes

    Solov'ev, V. A., Carrington, P., Zhuang, Q., Lai, K. T., Haywood, S. K., Ivanov, S. V. & Krier, A., 2008, NARROW GAP SEMICONDUCTORS 2007. Murdin, BN. & Clowes, S. (eds.). DORDRECHT: Springer, p. 129-131 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

  8. Published

    InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

    Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Vanov, S. V. & Krier, A., 03/2009, In: Microelectronics Journal. 40, 3, p. 469-472 4 p.

    Research output: Contribution to journalJournal articlepeer-review

  9. Published

    Influence of a Bi surfactant on Sb incorporation in InAsSb alloys

    Anderson, E. M., Lundquist, A. M., Sarney, W. L., Svensson, S. P., Carrington, P. J., Pearson, C. & Millunchick, J. M., 1/07/2014, In: Journal of Applied Physics. 116, 1, 014901.

    Research output: Contribution to journalJournal articlepeer-review

  10. Published

    InAs-based dilute nitride materials and devices for the mid-infrared spectral range

    Krier, A., De La Mare, M., Zhuang, Q., Carrington, P. J. & Patane, A., 4/02/2013, In: Proceedings of SPIE. 8631, 86311Q.

    Research output: Contribution to journalJournal articlepeer-review

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