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Dr Peter Carrington

Senior Lecturer

  1. Journal article
  2. Published

    InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

    Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Vanov, S. V. & Krier, A., 03/2009, In: Microelectronics Journal. 40, 3, p. 469-472 4 p.

    Research output: Contribution to journalJournal articlepeer-review

  3. Published

    Growth optimization of self-organized InSb/InAs quantum dots.

    Zhuang, Q., Carrington, P. J. & Krier, A., 13/11/2008, In: Journal of Physics D: Applied Physics. 41, 23, 4 p., 232003.

    Research output: Contribution to journalJournal articlepeer-review

  4. Published

    GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers.

    Yin, M., Nash, G. R., Coomber, S. D., Buckle, L., Carrington, P. J., Krier, A., Andreev, A., Przeslak, S. J. B., de Valicourt, G., Smith, S. J., Emeny, M. T. & Ashley, T., 23/09/2008, In: Applied Physics Letters. 93, 12, p. 121106

    Research output: Contribution to journalJournal articlepeer-review

  5. Published

    Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.

    Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Krier, A. & Ivanov, S. V., 1/09/2008, In: Applied Physics Letters. 93, 9, p. 091101

    Research output: Contribution to journalJournal articlepeer-review

  6. Published

    Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes

    Carrington, P., Solov'ev, V. A., Zhuang, Q., Ivanov, S. V. & Krier, A., 1/02/2008, In: Proceedings of SPIE. 6900, 69000I.

    Research output: Contribution to journalJournal article

  7. Published

    The development of room temperature LEDs and lasers for the mid-infrared spectral range.

    Krier, A., Yin, M., Smirnov, V., Batty, P. J., Carrington, P., Solovev, V. & Sherstnev, V., 01/2008, In: physica status solidi (a). 205, 1, p. 129-143 15 p.

    Research output: Contribution to journalJournal articlepeer-review

  8. Published

    Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. .

    Nash, G. R., Smith, S. J., Coomber, S. D., Przeslak, S., Andreev, A., Carrington, P., Yin, M., Krier, A., Buckle, L., Emeny, M. T. & Ashley, T., 24/09/2007, In: Applied Physics Letters. 91, 13, p. 131118

    Research output: Contribution to journalJournal articlepeer-review

  9. Published

    Reduced free carrier absorption loss in midinfrared double heterostructure diode lasers grown by liquid phase epitaxy. .

    Yin, M., Krier, A., Jones, R. & Carrington, P., 3/09/2007, In: Applied Physics Letters. 91, 10, 101104.

    Research output: Contribution to journalJournal articlepeer-review

  10. Conference paper
  11. Published

    Coupling in type II GaSb/GaAs quantum ring solar cells

    Montesdeoca Cardenes, D., Hodgson, P. D., De La Mata, M., Marshall, A. R. J., Molina, S. I., Carrington, P. J. & Krier, A., 14/05/2018.

    Research output: Contribution to conference - Without ISBN/ISSN Conference paperpeer-review

  12. Conference contribution/Paper
  13. Published

    Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

    Carrington, P., Delli, E., Letka, V., Bentley, M., Hodgson, P., Repiso Menendez, E., Hayton, J., Craig, A., Lu, Q., Beanland, R., Krier, A. & Marshall, A., 24/08/2020, Proceedings Volume 11503, Infrared Sensors, Devices, and Applications X. SPIE--The International Society for Optical Engineering, Vol. 11503.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

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