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Dr Qiandong Zhuang

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  1. 2020
  2. Published

    A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE

    Anyebe, E. A., Kesaria, M., Sanchez, A. M. & Zhuang, Q., 1/07/2020, In: Applied Physics A. 126, 6, 8 p., 427.

    Research output: Contribution to journalJournal articlepeer-review

  3. 2019
  4. Published

    Control of complex quantum structures in droplet epitaxy

    Chawner, J. M. A., Chang, Y., Hodgson, P. D., Hayne, M., Robson, A. J., Sanchez, A. M. & Zhuang, Q., 13/08/2019, In: Semiconductor Science and Technology. 34, 9, 7 p., 095011.

    Research output: Contribution to journalJournal articlepeer-review

  5. Published

    Topological edge states in high-temperature superconductiving FeSe/SrTiO 3 films with Te substitution

    Chen, L., Liu, H., Jiang, C., Shi, C., Wang, D., Cui, G., Li, X. & Zhuang, Q., 11/03/2019, In: Scientific Reports. 9, 1, 10 p., 4154.

    Research output: Contribution to journalJournal articlepeer-review

  6. 2018
  7. Published

    Fiber Bragg grating monitors for thermal and stress of the composite insulators in transmission lines

    Deng, H., Cai, W., Song, Y., Liu, J., Redman, C. & Zhuang, Q., 08/2018, In: Global Energy Interconnection. 1, 3, p. 382-390 9 p.

    Research output: Contribution to journalJournal articlepeer-review

  8. Published

    Novel Type-II InAs-AlSb Core-Shell Nanowires and Their Enhanced Negative Photocurrent for Efficient Photodetection

    Li, H., Alradhi, H., Jin, Z., Anyebe, E., Sanchez, A. M., Linhart, W. M., Kudrawiec, R., Fang, H., Wang, Z., Hu, W. & Zhuang, Q., 21/02/2018, In: Advanced Functional Materials. 28, 8, p. 1705382-1705389 8 p.

    Research output: Contribution to journalJournal articlepeer-review

  9. 2017
  10. Published

    Optimization of self-catalyzed InAs nanowires on flexible graphite for photovoltaic infrared photodetectors

    Anyebe, E., Sandall, I., Jin, Z., Sanchez, A. M., Rajpalke, M. K., Veal, T., Cao, Y. C., Li, H., Harvey, R. J. & Zhuang, Q., 10/04/2017, In: Scientific Reports. 7, p. 46110-46118 9 p.

    Research output: Contribution to journalJournal articlepeer-review

  11. Published

    Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics

    Zhuang, Q., Alradhi, H., Jin, Z., Chen, X. R., Shao, J., Chen, X., Sanchez, A. M., Cao, Y. C., Liu, J. Y., Yates, P., Durose, K. & Jin, C. J., 10/03/2017, In: Nanotechnology. 28, 10, 7 p., 105710.

    Research output: Contribution to journalJournal articlepeer-review

  12. Published

    Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires

    Chen, X., Zhuang, Q., Alradhi, H., Jin, Z., Zhu, L., Chen, X. & Shao, J., 8/03/2017, In: Nano Letters. 17, 3, p. 1545-1551 7 p.

    Research output: Contribution to journalJournal articlepeer-review

  13. Published

    Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

    Fernández-Delgado, N., Herrera, M., Chisholm, M. F., Ahmad Kamarudin, M., Zhuang, Q., Hayne, M. & Molina, S. I., 15/02/2017, In: Applied Surface Science. 395, p. 136-139 4 p.

    Research output: Contribution to journalJournal articlepeer-review

  14. 2016
  15. Published

    Quantum phase transitions in Sn bilayer based interfacial systems by an external strain

    Li, C., Zhuang, Q., Chen, Y., Shi, C. & Wang, D., 21/09/2016, In: Physical Chemistry Chemical Physics. 2016, 35, p. 24350-24355 6 p.

    Research output: Contribution to journalJournal articlepeer-review

  16. Published

    InSb-based quantum dot nanostructures for mid-infrared photonic devices

    Carrington, P. J., Repiso Menendez, E., Lu, Q., Fujita, H., Marshall, A. R. J., Zhuang, Q. & Krier, A., 16/09/2016, In: Proceedings of SPIE. 9919, 99190C.

    Research output: Contribution to journalJournal articlepeer-review

  17. Published

    Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots

    Fernández-Delgado, N., Herrera, M., Chisholm, M. F., Ahmad Kamarudin, M., Zhuang, Q., Hayne, M. & Molina, S. I., 08/2016, In: Journal of Materials Science. 51, 16, p. 7691-7698 8 p.

    Research output: Contribution to journalJournal articlepeer-review

  18. Published

    An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots

    Qiu, F., Qiu, W., Li, Y., Wang, X., Zhang, Y., Zhou, X., Lv, Y., Sun, Y., Deng, H., Hu, S., Dai, N., Wang, C., Yang, Y., Zhuang, Q., Hayne, M. & Krier, A., 12/02/2016, In: Nanotechnology. 27, 6, 6 p., 065602.

    Research output: Contribution to journalJournal articlepeer-review

  19. Published

    The influence of nitrogen and antimony on the optical quality of InNAs(Sb) alloys

    Latkowska, M., Baranowski, M., Linhart, W. M., Janiaka, F., Misiewicz, J., Segercrantz, N., Tuomisto, F., Zhuang, Q., Krier, A. & Kudrawiec, R., 11/02/2016, In: Journal of Physics D: Applied Physics. 49, 11, 7 p., 115105.

    Research output: Contribution to journalJournal articlepeer-review

  20. Published

    GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells

    Hodgson, P., Hayne, M., Robson, A., Zhuang, Q. & Danos, E., 28/01/2016, In: Journal of Applied Physics. 119, 4, 7 p., 044305.

    Research output: Contribution to journalJournal articlepeer-review

  21. 2015
  22. Published

    Peculiarities of the hydrogenated In(AsN) alloy

    Birindelli, S., Kesaria, M., Giubertoni, D., Pettinari, G., Velichko, A. V., Zhuang, Q., Krier, A., Patane, A., Polimeni, A. & Capizzi, M., 14/09/2015, In: Semiconductor Science and Technology. 30, p. 105030 10 p.

    Research output: Contribution to journalJournal articlepeer-review

  23. Published

    Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots

    Chang, Y-C., Robson, A., Harrison, S., Zhuang, Q. & Hayne, M., 22/06/2015, In: AIP Advances. 5, 6, 6 p., 067141.

    Research output: Contribution to journalJournal articlepeer-review

  24. Published

    Realization of vertically aligned, ultra-high aspect ratio InAsSb nanowires on graphite

    Anyebe, E., Sanchez, A., Hindmarsh, S., Chen, X., Shao, J., Rajpalke, M. K., Veal, T. D., Robinson, B., Kolosov, O., Anderson, F., Sandaram, R., Wang, Z. M., Falko, V. & Zhuang, Q., 18/06/2015, In: Nano Letters. 15, 7, p. 4348-4355 8 p.

    Research output: Contribution to journalLetterpeer-review

  25. Published

    Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

    Wheatley, R., Kesaria, M., Mwast, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. & Krier, A., 10/06/2015, In: Applied Physics Letters. 106, 4 p., 232105.

    Research output: Contribution to journalJournal articlepeer-review

  26. Published

    Gain and threshold current in type II In(As)Sb mid-infrared quantum dot lasers

    Lu, Q., Zhuang, Q. & Krier, A., 15/04/2015, In: Photonics. 2, 2, p. 414-425 12 p.

    Research output: Contribution to journalJournal articlepeer-review

  27. Published

    Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−xSbx nanowires

    Anyebe, E., Rajpalke, M. K., Veal, T. D., Jin, C. J., Wang, Z. M. & Zhuang, Q., 04/2015, In: Nano Research. 8, 4, p. 1309-1319 11 p.

    Research output: Contribution to journalJournal articlepeer-review

  28. Published

    A tunable nano-optofluidic polymer optical filter based on guided-mode resonance

    Xiao, G., Zhu, Q., Shen, Y., Li, K., Liu, M., Zhuang, Q. & Jin, C., 28/02/2015, In: Nanoscale. 7, 8, p. 3429-3434 6 p.

    Research output: Contribution to journalJournal articlepeer-review

  29. Published

    H-tailored surface conductivity in narrow band gap In(AsN)

    Velichko, A. V., Patane, A., Capizzi, M., Sandall, I. C., Giubertoni, D., Makarovsky, O., Polimeni, A., Krier, A., Zhuang, Q. & Tan, C. H., 12/01/2015, In: Applied Physics Letters. 106, 2, 4 p., 022111.

    Research output: Contribution to journalJournal articlepeer-review

  30. Published

    Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy

    Zhuang, Q., Anyebe, E., Chen, R., Liu, H., Sanchez, A., Rajpalke, M. K., Veal, T. D., Wang, Z. M., huang, Y. & Sun, H. D., 5/01/2015, In: Nano Letters. 15, 2, p. 1109-1116 8 p.

    Research output: Contribution to journalLetterpeer-review

  31. Published

    In(AsN) mid-infrared emission enhanced by rapid thermal annealing

    Kesaria, M., Birindelli, S., A.V. Velichko, A. V., Zhuang, Q., Patane, A., Capizzi, M. & Krier, A., 01/2015, In: Infrared Physics and Technology. 68, p. 138-142 5 p.

    Research output: Contribution to journalJournal articlepeer-review

  32. 2014
  33. Published

    Self-catalysed InAs1− xSbx nanowires grown directly on bare Si substrates

    Anyebe, E. & Zhuang, Q., 12/2014, In: Materials Research Bulletin. 60, p. 572–575 4 p.

    Research output: Contribution to journalJournal articlepeer-review

  34. Published

    Hydrogenation of GaSb/GaAs quantum rings

    Hodgson, P., Hayne, M., Ahmad Kamarudin, M., Zhuang, Q., Birindelli, S. & Capizzi, M., 28/08/2014, In: Applied Physics Letters. 105, 5 p., 081907.

    Research output: Contribution to journalJournal article

  35. Published

    Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels

    Velichko, A. V., Makarovsky, O., Mori, N., Eaves, L., Krier, A., Zhuang, Q. & Patane, A., 20/08/2014, In: Physical review B. 90, 7 p., 085309.

    Research output: Contribution to journalJournal articlepeer-review

  36. Published

    The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy

    Anyebe, E., Zhuang, Q., Kesaria, M. & Krier, A., 08/2014, In: Semiconductor Science and Technology. 29, 8, 7 p., 085010.

    Research output: Contribution to journalJournal articlepeer-review

  37. Published

    Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy

    Anyebe, E., Zhuang, Q., Sanchez, A. M., Lawson, S., Robson, A., Ponomarenko, L. A., Zhukov, A. & Kolosov, O., 11/07/2014, In: physica status solidi (RRL) - Rapid Research Letters. 8, 7, p. 658–662 5 p.

    Research output: Contribution to journalJournal articlepeer-review

  38. Published

    Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy

    Zhuang, Q., Anyebe, E., Sanchez, A. M., Rajpalke, M. K., Veal, T. D., Zhukov, A., Robinson, B., Anderson, F., Kolosov, O. & Falko, V., 25/06/2014, In: Nanoscale Research Letters. 9, 7 p., 321.

    Research output: Contribution to journalJournal articlepeer-review

  39. Published

    InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

    Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R. & Krier, A., 12/05/2014, In: Semiconductor Science and Technology. 29, 7, 8 p., 075011 .

    Research output: Contribution to journalJournal articlepeer-review

  40. Published

    Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

    Lu, Q., Zhuang, Q., Hayton, J., Yin, M. & Krier, A., 2014, In: Applied Physics Letters. 105, 3, 3 p., 031115.

    Research output: Contribution to journalJournal articlepeer-review

  41. 2013
  42. Published

    Antimonide quantum dot nanostructures for novel photonic device applications

    Krier, A., Carrington, P., Zhuang, Q., Young, R., Hayne, M., Lu, Q., James Asirvatham, J., Wagener, M., Botha, J. R., Koenraad, P. M. & Smakman, E. P., 5/11/2013, The wonder of nanotechnology: quantum optoelectronic devices and applications . SPIE

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNChapter (peer-reviewed)peer-review

  43. Published

    Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings

    Hodgson, P., Young, R., Ahmad Kamarudin, M., Zhuang, Q. & Hayne, M., 28/10/2013, In: Physical review B. 88, 15, 7 p., 155322.

    Research output: Contribution to journalJournal articlepeer-review

  44. Published

    Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures

    Hodgson, P. D., Young, R. J., Kamarudin, M. A., Carrington, P. J., Krier, A., Zhuang, Q. D., Smakman, E. P., Koenraad, P. M. & Hayne, M., 21/08/2013, In: Journal of Applied Physics. 114, 7, 7 p., 073519.

    Research output: Contribution to journalJournal articlepeer-review

  45. Published

    Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks

    Mahajumi, A. S., Carrington, P., Kostakis, I., Missous, M., Sanchez, A., Zhuang, Q., Young, R., Hayne, M. & Krier, A., 31/07/2013, In: Journal of Physics D: Applied Physics. 46, 30, 6 p., 305104.

    Research output: Contribution to journalJournal articlepeer-review

  46. Published

    InAs-based dilute nitride materials and devices for the mid-infrared spectral range

    Krier, A., De La Mare, M., Zhuang, Q., Carrington, P. J. & Patane, A., 4/02/2013, In: Proceedings of SPIE. 8631, 86311Q.

    Research output: Contribution to journalJournal articlepeer-review

  47. 2012
  48. Published

    Effects of substrate pm M comtent on the growth of the mid-infrared dilute nitride InAsN alloy

    De La Mare, M., Zhuang, Q., Krier, A. & Patane, A., 3/10/2012, In: Journal of Physics D: Applied Physics. 45, 39, p. 395103-395105 3 p.

    Research output: Contribution to journalJournal articlepeer-review

  49. Published

    Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor

    Kozlova, N. V., Mori, N., Makarovsky, O., Eaves, L., Zhuang, Q., Krier, A. & Patane, A., 2/10/2012, In: Nature Communications. 3, 5 p., 1097.

    Research output: Contribution to journalJournal articlepeer-review

  50. Published

    Development of dilute nitride materials for mid-infrared diode lasers

    Krier, A., de la Mare, M., Carrington, P. J., Thompson, M., Zhuang, Q., Patane, A. & Kudrawiec, R., 09/2012, In: Semiconductor Science and Technology. 27, 9, 8 p., 094009 .

    Research output: Contribution to journalJournal articlepeer-review

  51. Published

    Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

    Carrington, P. J., Mahajumi, A. S., Wagener, M. C., Botha, J. R., Zhuang, Q. & Krier, A., 15/05/2012, In: Physica B: Condensed Matter. 407, 10, p. 1493-1496 4 p.

    Research output: Contribution to journalJournal articlepeer-review

  52. 2011
  53. Published

    Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.

    Drachenko, O., Patane, A., Kozlova, N. V., Zhuang, Q., Krier, A., Eaves, L., Helm, M., EU Contract No. RII3-CT-2004-506239 (Funder), DFG Grant Nos. DR832/3-1 (Funder), DFG KO 3743/1-1 (Funder) & AOBJ: 550341 (Funder), 04/2011, In: Applied Physics Letters. 98, 16, p. 162109

    Research output: Contribution to journalJournal articlepeer-review

  54. Published

    Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings

    Kamarudin, M. A., Hayne, M., Young, R. J., Zhuang, Q. D., Ben, T. & Molina, S. I., 10/03/2011, In: Physical review B. 83, 11, 6 p., 115311 .

    Research output: Contribution to journalJournal articlepeer-review

  55. Published

    MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices

    de la Mare, M., Krier, A., Zhuang, Q., Carrington, P. & Patane, A., 2011, In: Proceedings of SPIE. 7945, 79450L

    Research output: Contribution to journalJournal article

  56. Published

    Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

    Carrington, P., de la Mare, M., Cheetham, K. J., Zhuang, Q. & Krier, A., 2011, In: Advances in OptoElectronics. 2011, n/a, 8 p., 145012.

    Research output: Contribution to journalJournal articlepeer-review

  57. Published

    Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys

    Kudrawiec, R., Latkowska, M., Misiewicz, J., Zhuang, Q., Godenir, A. M. R. & Krier, A., 2011, In: Applied Physics Letters. 99, 1, 3 p., 011904.

    Research output: Contribution to journalJournal articlepeer-review

  58. 2010
  59. Published

    Structural and optical properties of dilute InAsN grown by molecular beam epitaxy.

    Ibanez, J., Oliva, R., de la Mare, M., Schmidbauer, M., Hernandez, S., Pellegrino, P., Scurr, D. J., Cusco, R., Artus, L., Shafi, M., Mari, R. H., Henini, M., Zhuang, Q., Godenir, A. M. R., Krier, A., Spanish Ministry of Education and Science Project No. MAT2007-63617 (Funder) & EPRSC (UK) (Funder), 11/2010, In: Journal of Applied Physics. 108, 10, p. 103504

    Research output: Contribution to journalJournal articlepeer-review

  60. Published

    Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range.

    de la Mare, M., Carrington, P. J., Wheatley, R., Zhuang, Q., Beanland, R., Sanchez, A. M., Krier, A. & EPSRC Studentship for MDLM (Funder), 1/09/2010, In: Journal of Physics D: Applied Physics. 43, 34, p. 345103

    Research output: Contribution to journalJournal articlepeer-review

  61. Published

    Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy.

    Makarovsky, O., Feu, W. H. M., Patane, A., Eaves, L., Zhuang, Q. D., Krier, A., Beanland, R. & Airey, R., 1/02/2010, In: Applied Physics Letters. 96, 5, p. 052115

    Research output: Contribution to journalJournal articlepeer-review

  62. Published

    GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer.

    Ahmad Kamarudin, M., Hayne, M., Zhuang, Q. D., Kolosov, O., Nuytten, T., Moshchalkov, V. V. & Dinelli, F., 26/01/2010, In: Journal of Physics D: Applied Physics. 43, 6, p. 065402

    Research output: Contribution to journalJournal articlepeer-review

  63. 2009
  64. Published

    Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth.

    Chen, R., Phann, S., Sun, H. D., Zhuang, Q., Godenir, A. M. R. & Krier, A., 28/12/2009, In: Applied Physics Letters. 95, 26, p. 261905

    Research output: Contribution to journalJournal articlepeer-review

  65. Published

    Molecular beam epitaxial (MBE) growth and spectroscopy of dilute nitride InAsN:Sb for mid-infrared applications.

    Zhuang, Q. & Krier, A., 15/12/2009, In: IET Optoelectronics. 3, 6, p. 248-258 11 p.

    Research output: Contribution to journalJournal articlepeer-review

  66. Published

    Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx.

    Patane, A., Feu, W. H. M., Makarovsky, O., Drachenko, O., Eaves, L., Krier, A., Zhuang, Q. D., Helm, M., Goiran, M. & Hill, G., 16/09/2009, In: Physical review B. 80, 11, p. 115207

    Research output: Contribution to journalJournal articlepeer-review

  67. Published

    Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.

    de la Mare, M., Zhuang, Q., Krier, A., Patane, A. & Dhar, S., 22/07/2009, In: Applied Physics Letters. 95, 3, p. 031110

    Research output: Contribution to journalJournal articlepeer-review

  68. Published

    Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.

    Carrington, P. J., Zhuang, Q., Yin, M. & Krier, A., 07/2009, In: Semiconductor Science and Technology. 24, 7, p. 075001

    Research output: Contribution to journalJournal articlepeer-review

  69. Published

    Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys.

    Kudrawiec, R., Misiewicz, J., Zhuang, Q., Godenir, A. M. R. & Krier, A., 14/04/2009, In: Applied Physics Letters. 94, 15, p. 151902

    Research output: Contribution to journalJournal articlepeer-review

  70. Published

    InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

    Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Vanov, S. V. & Krier, A., 03/2009, In: Microelectronics Journal. 40, 3, p. 469-472 4 p.

    Research output: Contribution to journalJournal articlepeer-review

  71. Published

    Magnetoresistance and electron mobility in dilute nitride InAsN alloys

    Zhuang, Q., Feu, W. H. M., Patane, A., Makarovsky, O., Allison, G., Eaves, L., De La Mare, M., Krier, A. & Hill, G., 2009, In: AIP Conference Proceedings. 1288

    Research output: Contribution to journalJournal article

  72. 2008
  73. Published

    Electron coherence length and mobility in highly mismatched III-N-V alloys.

    Patane, A., Allison, G., Eaves, L., Kozlova, N. V., Zhuang, Q. D., Krier, A., Hopkinson, M. & Hill, G., 23/12/2008, In: Applied Physics Letters. 93, 25, p. 252106

    Research output: Contribution to journalJournal articlepeer-review

  74. Published

    Growth optimization of self-organized InSb/InAs quantum dots.

    Zhuang, Q., Carrington, P. J. & Krier, A., 13/11/2008, In: Journal of Physics D: Applied Physics. 41, 23, 4 p., 232003.

    Research output: Contribution to journalJournal articlepeer-review

  75. Published

    Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance

    Cripps, S. A., Hosea, T. J. C., Krier, A., Smirnov, V., Batty, P. J., Zhuang, Q. D., Lin, H. H., Liu, P. W. & Tsai, G., 30/09/2008, In: Thin Solid Films. 516, 22, p. 8049-8058 10 p.

    Research output: Contribution to journalJournal articlepeer-review

  76. Published

    Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics

    Zhuang, Q., Godenir, A., Krier, A., Tsai, G. & Lin, H. H., 22/09/2008, In: Applied Physics Letters. 93, 12, p. 121903

    Research output: Contribution to journalJournal articlepeer-review

  77. Published

    Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.

    Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Krier, A. & Ivanov, S. V., 1/09/2008, In: Applied Physics Letters. 93, 9, p. 091101

    Research output: Contribution to journalJournal articlepeer-review

  78. Published

    Photoluminescence in InAsN epilayers grown by molecular beam epitaxy

    Zhuang, Q., Godenir, A. & Krier, A., 10/06/2008, In: Journal of Physics D: Applied Physics. 41, 13, p. 132002

    Research output: Contribution to journalJournal articlepeer-review

  79. Published

    Room temperature photoluminescence at 4.5 mu m from InAsN

    Zhuang, Q., Godenir, A. M. R., Krier, A., Lai, K. T. & Haywood, S. K., 26/03/2008, In: Journal of Applied Physics. 103, 6, p. 063520

    Research output: Contribution to journalJournal articlepeer-review

  80. Published

    Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes

    Carrington, P., Solov'ev, V. A., Zhuang, Q., Ivanov, S. V. & Krier, A., 1/02/2008, In: Proceedings of SPIE. 6900, 69000I.

    Research output: Contribution to journalJournal article

  81. Published

    InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes

    Solov'ev, V. A., Carrington, P., Zhuang, Q., Lai, K. T., Haywood, S. K., Ivanov, S. V. & Krier, A., 2008, NARROW GAP SEMICONDUCTORS 2007. Murdin, BN. & Clowes, S. (eds.). DORDRECHT: Springer, p. 129-131 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

  82. Published

    InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes.

    Solov'ev, V. A., Carrington, P., Zhuang, Q., Lai, K. T., Haywood, S. K., Ivanov, S. V. & Krier, A., 2008, Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 129-131 3 p. (Springer Proceedings in Physics).

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNChapter

  83. 2007
  84. Published

    Strain enhancement during annealing of GaAsN alloys.

    Zhuang, Q. D., Krier, A. & Stanley, C. R., 15/05/2007, In: Journal of Applied Physics. 101, 10, p. 103536

    Research output: Contribution to journalJournal articlepeer-review

  85. Published

    Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy. .

    Cripps, S. A., Hosea, T. J. C., Krier, A., Smirnov, V., Batty, P. J., Zhuang, Q. D., Lin, H. H., Liu, P. W. & Tsai, G., 24/04/2007, In: Applied Physics Letters. 92, 17, p. 172106

    Research output: Contribution to journalJournal articlepeer-review

  86. 2006
  87. Published

    Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. .

    Liu, P. W., Tsai, G., Lin, H. H., Krier, A., Zhuang, Q. D. & Stone, M, M., 13/11/2006, In: Applied Physics Letters. 89, 20, p. 201115

    Research output: Contribution to journalJournal articlepeer-review

  88. Published

    Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. .

    Krier, A., Stone, M., Zhuang, Q. D., Liu, P. W., Tsai, G. & Lin, H. H., 28/08/2006, In: Applied Physics Letters. 89, 9, p. 091110

    Research output: Contribution to journalJournal articlepeer-review

  89. 2004
  90. Unpublished

    Effect of As supply on nitrogen incorporation of MBE grown Ga(In)Nas/GaAs quantum well.

    Zhuang, Q. D. & Stanley, C., 2004, (Unpublished) Proceedings of the 13th international semiconducting and insulating materials conference. Beijing, China

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

  91. 2001
  92. Published

    Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice

    Zhuang, Q., Yoon, S. F. & Zheng, H. Q., 2001, In: Solid State Communications. 117, 8, p. 465-469 5 p.

    Research output: Contribution to journalJournal articlepeer-review

  93. Published

    Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction

    Yuan, K., Radhakrishnan, K., Zheng, H. Q., Zhuang, Q. & Ing, G. I., 2001, In: Thin Solid Films. 391, 1, p. 36-41 6 p.

    Research output: Contribution to journalJournal article

  94. Published

    Growth and emission tuning of InAs/InP quantum dots superlattice

    Zhuang, Q., Yoon, S. F. & Zheng, H. Q., 2001, In: Journal of Crystal Growth. 227-228, p. 1084-1088 5 p.

    Research output: Contribution to journalJournal articlepeer-review

  95. Published

    Photoluminescence properties of self-assembled InAs quantum dots grown on InP substrates by solid source molecular beam epitaxy

    Zhuang, Q., Yoon, S. F. & Zheng, H. Q., 2001, In: Journal of Vacuum Science and Technology B. 19, 4, p. 1475-1478 4 p.

    Research output: Contribution to journalJournal article

  96. Published

    Properties and turning of intraband optical absorption in inxga1-xas/gaas self-assembled quantum dot superlattice

    Liu, B., Zhuang, Q., Yoon, S. F., Dai, J. H., Kong, M. Y., Zeng, Y. P., Li, J. M., Lin, L. Y. & Zhang, J. H., 2001, In: International Journal of Modern Physics B. 15, 13, p. 1959-1968 10 p.

    Research output: Contribution to journalJournal articlepeer-review

  97. 2000
  98. Published

    Effect of matrix on InAs self-organized nanostructures on InP substrate

    Zhuang, Q., Yoon, S. F. & Zheng, H. Q., 2000, Proceedings Conference on Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. . Broekman, L. D., Usher, B. F. & Riley, J. D. (eds.). IEEE, p. 455-458 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNChapter

  99. Published

    Effect of rapid thermal annealing on InGaAs/GaAs quantum wells

    Zhuang, Q., Li, J. M., Zeng, Y. P., Yoon, S. F., Zheng, H. Q., Kong, M. Y. & Lin, L. Y., 2000, In: Journal of Crystal Growth. 212, 1-2, p. 352-355 4 p.

    Research output: Contribution to journalJournal articlepeer-review

  100. Published

    Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice

    Zhuang, Q., Li, J. M., Wang, X. X., Zeng, Y. P., Wang, Y. T., Wang, B. Q., Pan, L., Wu, J., Kong, M. Y. & Lin, L. Y., 2000, In: Journal of Crystal Growth. 208, 1-4, p. 791-794 4 p.

    Research output: Contribution to journalJournal articlepeer-review

  101. Published

    Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy

    Zhuang, Q., Yoon, S. F., Zheng, H. Q. & Yuan, K. H., 2000, In: Journal of Crystal Growth. 216, 1-4, p. 57-61 5 p.

    Research output: Contribution to journalJournal articlepeer-review

  102. Published

    Influence of indium composition on the surface morphology of self-organized InxGa1−xAs quantum dots on GaAs substrates

    Li, H. X., Zhuang, Q., Wang, Z. G. & Daniels-Race, T., 2000, In: Journal of Applied Physics. 87, 1, p. 188-191 4 p.

    Research output: Contribution to journalJournal articlepeer-review

  103. 1999
  104. Published

    Self-organization of the InGaAs/GaAs quantum dots superlattice

    Zhuang, Q., Li, H., Pan, L., Li, J., Kong, M. & Lin, L., 1999, In: Journal of Crystal Growth. 201-202, 1-4, p. 1161-1163 3 p.

    Research output: Contribution to journalJournal articlepeer-review

  105. Published

    Self-organization of wire-like InAs nanostructures on InP

    Li, H., Zhuang, Q., Kong, X., Wang, Z. & Daniels-Race, T., 1999, In: Journal of Crystal Growth. 205, 4, p. 613-617 5 p.

    Research output: Contribution to journalJournal articlepeer-review

  106. Published

    Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers

    Zhuang, Q., Li, J. M., Zeng, Y. P., Pan, L., Chen, Y. H., Kong, M. Y. & Lin, L. Y., 1999, In: Journal of Electronic Materials. 28, 5, p. 503-505 3 p.

    Research output: Contribution to journalJournal articlepeer-review

  107. Published

    Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures

    Zhuang, Q., Li, J. M., Zeng, Y. P., Pan, L., Li, H. X., Kong, M. Y. & Lin, L. Y., 1999, In: Journal of Crystal Growth. 200, 3-4, p. 375-381 7 p.

    Research output: Contribution to journalJournal articlepeer-review

  108. 1998
  109. Published

    Asymmetric dark current in double-barrier quantum well infrared photodetectors

    Zhuang, Q., Li, J. & Lin, L., 1998, In: Proceedings of the Society of Photo-Optical Instrumentation Engineers . 3437, p. 391-395 5 p.

    Research output: Contribution to journalJournal articlepeer-review

  110. Published

    Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

    Zhuang, Q., Li, J. M., Li, H. X., Zeng, Y. P., Pan, L., Chen, Y. H., Kong, M. Y. & Lin, L. Y., 1998, In: Applied Physics Letters. 73, 25, p. 3706-3708 3 p.

    Research output: Contribution to journalJournal articlepeer-review

  111. Published

    Normally incident infrared absorption in vertically aligned InGaAs/GaAs quantum dot superlattice,

    Zhuang, Q., Li, J. M., Zeng, Y. P., Pan, L., Kong, M. Y. & Lin, L. Y., 1998, In: Journal of Infrared and Microwave . 17, p. 477-?

    Research output: Contribution to journalJournal articlepeer-review

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