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Electron and hole confinement by type-II semiconductor nano-rings

Research output: Contribution to conference - Without ISBN/ISSN Abstract

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Electron and hole confinement by type-II semiconductor nano-rings. / Young, Robert.
2013. Abstract from One Day Quantum Dot Meeting, London, United Kingdom.

Research output: Contribution to conference - Without ISBN/ISSN Abstract

Harvard

Young, R 2013, 'Electron and hole confinement by type-II semiconductor nano-rings', One Day Quantum Dot Meeting, London, United Kingdom, 10/01/13.

APA

Young, R. (2013). Electron and hole confinement by type-II semiconductor nano-rings. Abstract from One Day Quantum Dot Meeting, London, United Kingdom.

Vancouver

Young R. Electron and hole confinement by type-II semiconductor nano-rings. 2013. Abstract from One Day Quantum Dot Meeting, London, United Kingdom.

Author

Young, Robert. / Electron and hole confinement by type-II semiconductor nano-rings. Abstract from One Day Quantum Dot Meeting, London, United Kingdom.

Bibtex

@conference{9220396ca6ac460f917c356e3f24ac4d,
title = "Electron and hole confinement by type-II semiconductor nano-rings",
abstract = "Semiconductor nanostructures are appealing for use in applications of quantum information processing (QIP) as they provide an interface between flying- and stationary-qubits. Two significant physical limitations are present in most systems; shallow confinement requires low-temperature operation and strong interactions with their surroundings typically results in short coherence times. GaSb/GaAs structures could potentially address these, as they present a deep confining potential for holes making room-temperature operation possible, and hole-spins can be robust against dephasing . The type-II nature of this system is non-ideal, however, and has led to inferior optical properties. Here we introduce a quantum ring system grown by molecular beam epitaxy that, unusually, possesses a high material contrast between the GaSb ring and its GaAs core, as shown in figure 1a. This provides confinement for the electrons within the centre of the rings, as illustrated in figure 1b, enhancing the optical quality of the nanostructures in this system.",
author = "Robert Young",
year = "2013",
month = jan,
day = "10",
language = "English",
note = "One Day Quantum Dot Meeting ; Conference date: 10-01-2013",

}

RIS

TY - CONF

T1 - Electron and hole confinement by type-II semiconductor nano-rings

AU - Young, Robert

PY - 2013/1/10

Y1 - 2013/1/10

N2 - Semiconductor nanostructures are appealing for use in applications of quantum information processing (QIP) as they provide an interface between flying- and stationary-qubits. Two significant physical limitations are present in most systems; shallow confinement requires low-temperature operation and strong interactions with their surroundings typically results in short coherence times. GaSb/GaAs structures could potentially address these, as they present a deep confining potential for holes making room-temperature operation possible, and hole-spins can be robust against dephasing . The type-II nature of this system is non-ideal, however, and has led to inferior optical properties. Here we introduce a quantum ring system grown by molecular beam epitaxy that, unusually, possesses a high material contrast between the GaSb ring and its GaAs core, as shown in figure 1a. This provides confinement for the electrons within the centre of the rings, as illustrated in figure 1b, enhancing the optical quality of the nanostructures in this system.

AB - Semiconductor nanostructures are appealing for use in applications of quantum information processing (QIP) as they provide an interface between flying- and stationary-qubits. Two significant physical limitations are present in most systems; shallow confinement requires low-temperature operation and strong interactions with their surroundings typically results in short coherence times. GaSb/GaAs structures could potentially address these, as they present a deep confining potential for holes making room-temperature operation possible, and hole-spins can be robust against dephasing . The type-II nature of this system is non-ideal, however, and has led to inferior optical properties. Here we introduce a quantum ring system grown by molecular beam epitaxy that, unusually, possesses a high material contrast between the GaSb ring and its GaAs core, as shown in figure 1a. This provides confinement for the electrons within the centre of the rings, as illustrated in figure 1b, enhancing the optical quality of the nanostructures in this system.

M3 - Abstract

T2 - One Day Quantum Dot Meeting

Y2 - 10 January 2013

ER -