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Nitrogen doped multilayer photo catalytically reduced graphene oxide floating gate: Al/PMMA/NrGO/SiO2/p–Si/Au based hybrid gate stack for non volatile memory applications

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Nitrogen doped multilayer photo catalytically reduced graphene oxide floating gate: Al/PMMA/NrGO/SiO2/p–Si/Au based hybrid gate stack for non volatile memory applications. / Soni, Mahesh; Soni, Ajay; Sharma, Satinder K.
In: Organic Electronics, Vol. 51, 01.12.2017, p. 48-53.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Soni, M, Soni, A & Sharma, SK 2017, 'Nitrogen doped multilayer photo catalytically reduced graphene oxide floating gate: Al/PMMA/NrGO/SiO2/p–Si/Au based hybrid gate stack for non volatile memory applications', Organic Electronics, vol. 51, pp. 48-53. https://doi.org/10.1016/j.orgel.2017.09.011

APA

Soni, M., Soni, A., & Sharma, S. K. (2017). Nitrogen doped multilayer photo catalytically reduced graphene oxide floating gate: Al/PMMA/NrGO/SiO2/p–Si/Au based hybrid gate stack for non volatile memory applications. Organic Electronics, 51, 48-53. https://doi.org/10.1016/j.orgel.2017.09.011

Vancouver

Soni M, Soni A, Sharma SK. Nitrogen doped multilayer photo catalytically reduced graphene oxide floating gate: Al/PMMA/NrGO/SiO2/p–Si/Au based hybrid gate stack for non volatile memory applications. Organic Electronics. 2017 Dec 1;51:48-53. doi: 10.1016/j.orgel.2017.09.011

Author

Soni, Mahesh ; Soni, Ajay ; Sharma, Satinder K. / Nitrogen doped multilayer photo catalytically reduced graphene oxide floating gate : Al/PMMA/NrGO/SiO2/p–Si/Au based hybrid gate stack for non volatile memory applications. In: Organic Electronics. 2017 ; Vol. 51. pp. 48-53.

Bibtex

@article{db822d4420814513bae150192f88be7b,
title = "Nitrogen doped multilayer photo catalytically reduced graphene oxide floating gate: Al/PMMA/NrGO/SiO2/p–Si/Au based hybrid gate stack for non volatile memory applications",
abstract = "Photo catalytically assisted, multi–layer nitrogen doped reduced graphene oxide (ML–NrGO) is investigated as a promising charge storage layer in Al/PMMA/NrGO/SiO2/p–Si/Au structure. A considerable memory window (ΔW) of ∼3.3 V at ± 7 V sweep voltage and long data retention upto ∼ 105 s is demonstrated as an encouraging candidature for emerging memory hierarchies. The clockwise hysteresis supports the hole charge trapping mechanism in the NrGO based structure. The ML–NrGO memory devices provide the rapid programming, saturation of the program transients, store more data at less cost and reduced ballistic transport in the plane perpendicular to NrGO. The facile, solution processable, cost effective device processing and stable retention of the fabricated ML–NrGO based Al/PMMA/NrGO/SiO2/p–Si/Au flash memory structures proves to be a potential alternative for existing EEPROM based embedded applications and also for commercial scale production of flash memory based on flexible organic electronics.",
author = "Mahesh Soni and Ajay Soni and Sharma, {Satinder K.}",
year = "2017",
month = dec,
day = "1",
doi = "10.1016/j.orgel.2017.09.011",
language = "English",
volume = "51",
pages = "48--53",
journal = "Organic Electronics",
issn = "1566-1199",
publisher = "Elsevier BV",

}

RIS

TY - JOUR

T1 - Nitrogen doped multilayer photo catalytically reduced graphene oxide floating gate

T2 - Al/PMMA/NrGO/SiO2/p–Si/Au based hybrid gate stack for non volatile memory applications

AU - Soni, Mahesh

AU - Soni, Ajay

AU - Sharma, Satinder K.

PY - 2017/12/1

Y1 - 2017/12/1

N2 - Photo catalytically assisted, multi–layer nitrogen doped reduced graphene oxide (ML–NrGO) is investigated as a promising charge storage layer in Al/PMMA/NrGO/SiO2/p–Si/Au structure. A considerable memory window (ΔW) of ∼3.3 V at ± 7 V sweep voltage and long data retention upto ∼ 105 s is demonstrated as an encouraging candidature for emerging memory hierarchies. The clockwise hysteresis supports the hole charge trapping mechanism in the NrGO based structure. The ML–NrGO memory devices provide the rapid programming, saturation of the program transients, store more data at less cost and reduced ballistic transport in the plane perpendicular to NrGO. The facile, solution processable, cost effective device processing and stable retention of the fabricated ML–NrGO based Al/PMMA/NrGO/SiO2/p–Si/Au flash memory structures proves to be a potential alternative for existing EEPROM based embedded applications and also for commercial scale production of flash memory based on flexible organic electronics.

AB - Photo catalytically assisted, multi–layer nitrogen doped reduced graphene oxide (ML–NrGO) is investigated as a promising charge storage layer in Al/PMMA/NrGO/SiO2/p–Si/Au structure. A considerable memory window (ΔW) of ∼3.3 V at ± 7 V sweep voltage and long data retention upto ∼ 105 s is demonstrated as an encouraging candidature for emerging memory hierarchies. The clockwise hysteresis supports the hole charge trapping mechanism in the NrGO based structure. The ML–NrGO memory devices provide the rapid programming, saturation of the program transients, store more data at less cost and reduced ballistic transport in the plane perpendicular to NrGO. The facile, solution processable, cost effective device processing and stable retention of the fabricated ML–NrGO based Al/PMMA/NrGO/SiO2/p–Si/Au flash memory structures proves to be a potential alternative for existing EEPROM based embedded applications and also for commercial scale production of flash memory based on flexible organic electronics.

U2 - 10.1016/j.orgel.2017.09.011

DO - 10.1016/j.orgel.2017.09.011

M3 - Journal article

VL - 51

SP - 48

EP - 53

JO - Organic Electronics

JF - Organic Electronics

SN - 1566-1199

ER -