Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD.

Physics

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https://doi.org/10.1109/TNS.2007.903180
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Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD. / Sopczak, Andre; Bekhouche, Khaled; Bowdery, Chris et al.
In: IEEE Transactions on Nuclear Science, Vol. 54, No. 4, 08.2007, p. 1429-1434.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Sopczak, A, Bekhouche, K, Bowdery, C, Damerell, C, Davies, G, Dehimi, L, Greenshaw, T, Koziel, M, Stefanov, K, Walder, J, Woolliscroft, T & Worm, S 2007, 'Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD.', IEEE Transactions on Nuclear Science, vol. 54, no. 4, pp. 1429-1434. https://doi.org/10.1109/TNS.2007.903180

APA

Sopczak, A., Bekhouche, K., Bowdery, C., Damerell, C., Davies, G., Dehimi, L., Greenshaw, T., Koziel, M., Stefanov, K., Walder, J., Woolliscroft, T., & Worm, S. (2007). Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD. IEEE Transactions on Nuclear Science, 54(4), 1429-1434. https://doi.org/10.1109/TNS.2007.903180

Vancouver

Sopczak A, Bekhouche K, Bowdery C, Damerell C, Davies G, Dehimi L et al. Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD. IEEE Transactions on Nuclear Science. 2007 Aug;54(4):1429-1434. doi: 10.1109/TNS.2007.903180

Author

Sopczak, Andre ; Bekhouche, Khaled ; Bowdery, Chris et al. / Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD. In: IEEE Transactions on Nuclear Science. 2007 ; Vol. 54, No. 4. pp. 1429-1434.

Bibtex

@article{b68e5cc5197944fb93ab654ae7a79e7d,

title = "Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD.",

abstract = "Results of detailed simulations of the charge transfer inefficiency of a prototype serial readout CCD chip are reported. The effect of radiation damage on the chip operating in a particle detector at high frequency at a future accelerator is studied, specifically the creation of two electron trap levels, 0.17 eV and 0.44 eV below the bottom of the conduction band. Good agreement is found between simulations using the ISE-TCAD DESSIS program and an analytical model for the former level but not for the latter. Optimum operation is predicted to be at about 250 K where the effects of the traps is minimal; this being approximately independent of readout frequency in the range 7-50 MHz. This work has been carried out within the Linear Collider Flavour Identification (LCFI) collaboration in the context of the International Linear Collider (ILC) project.",

author = "Andre Sopczak and Khaled Bekhouche and Chris Bowdery and Chris Damerell and Gavin Davies and Lakhdar Dehimi and Tim Greenshaw and Michal Koziel and Konstantin Stefanov and James Walder and Tim Woolliscroft and Steve Worm",

note = "{"}{\textcopyright}2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.{"} {"}This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.{"}",

year = "2007",

month = aug,

doi = "10.1109/TNS.2007.903180",

language = "English",

volume = "54",

pages = "1429--1434",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",

number = "4",

}

RIS

TY - JOUR

T1 - Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD.

AU - Sopczak, Andre

AU - Bekhouche, Khaled

AU - Bowdery, Chris

AU - Damerell, Chris

AU - Davies, Gavin

AU - Dehimi, Lakhdar

AU - Greenshaw, Tim

AU - Koziel, Michal

AU - Stefanov, Konstantin

AU - Walder, James

AU - Woolliscroft, Tim

AU - Worm, Steve

N1 - "©2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE." "This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder."

PY - 2007/8

Y1 - 2007/8

N2 - Results of detailed simulations of the charge transfer inefficiency of a prototype serial readout CCD chip are reported. The effect of radiation damage on the chip operating in a particle detector at high frequency at a future accelerator is studied, specifically the creation of two electron trap levels, 0.17 eV and 0.44 eV below the bottom of the conduction band. Good agreement is found between simulations using the ISE-TCAD DESSIS program and an analytical model for the former level but not for the latter. Optimum operation is predicted to be at about 250 K where the effects of the traps is minimal; this being approximately independent of readout frequency in the range 7-50 MHz. This work has been carried out within the Linear Collider Flavour Identification (LCFI) collaboration in the context of the International Linear Collider (ILC) project.

AB - Results of detailed simulations of the charge transfer inefficiency of a prototype serial readout CCD chip are reported. The effect of radiation damage on the chip operating in a particle detector at high frequency at a future accelerator is studied, specifically the creation of two electron trap levels, 0.17 eV and 0.44 eV below the bottom of the conduction band. Good agreement is found between simulations using the ISE-TCAD DESSIS program and an analytical model for the former level but not for the latter. Optimum operation is predicted to be at about 250 K where the effects of the traps is minimal; this being approximately independent of readout frequency in the range 7-50 MHz. This work has been carried out within the Linear Collider Flavour Identification (LCFI) collaboration in the context of the International Linear Collider (ILC) project.

U2 - 10.1109/TNS.2007.903180

DO - 10.1109/TNS.2007.903180

M3 - Journal article

VL - 54

SP - 1429

EP - 1434

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 4

ER -

Research

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