Home > Research > Publications & Outputs > Tunable singlet-triplet splitting in a few-elec...

Associated organisational unit

View graph of relations

Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot

Research output: Contribution to journalJournal articlepeer-review

Published

Standard

Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot. / Shi, Zhan; Simmons, C. B.; Prance, J. R.; Gamble, John King; Friesen, Mark; Savage, D. E.; Lagally, M. G.; Coppersmith, S. N.; Eriksson, M. A.

In: Applied Physics Letters, Vol. 99, No. 23, 233108, 05.12.2011, p. -.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Shi, Z, Simmons, CB, Prance, JR, Gamble, JK, Friesen, M, Savage, DE, Lagally, MG, Coppersmith, SN & Eriksson, MA 2011, 'Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot', Applied Physics Letters, vol. 99, no. 23, 233108, pp. -. https://doi.org/10.1063/1.3666232

APA

Shi, Z., Simmons, C. B., Prance, J. R., Gamble, J. K., Friesen, M., Savage, D. E., Lagally, M. G., Coppersmith, S. N., & Eriksson, M. A. (2011). Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot. Applied Physics Letters, 99(23), -. [233108]. https://doi.org/10.1063/1.3666232

Vancouver

Shi Z, Simmons CB, Prance JR, Gamble JK, Friesen M, Savage DE et al. Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot. Applied Physics Letters. 2011 Dec 5;99(23):-. 233108. https://doi.org/10.1063/1.3666232

Author

Shi, Zhan ; Simmons, C. B. ; Prance, J. R. ; Gamble, John King ; Friesen, Mark ; Savage, D. E. ; Lagally, M. G. ; Coppersmith, S. N. ; Eriksson, M. A. / Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot. In: Applied Physics Letters. 2011 ; Vol. 99, No. 23. pp. -.

Bibtex

@article{8c71fae2b2e54862b1d95919f28f07ea,
title = "Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot",
abstract = "We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field and identify the spin of the lowest three eigenstates in an effective two-electron regime. We extract the singlet-triplet splitting, an essential parameter for spin qubits, from the data. We find it to be tunable by lateral displacement of the dot, which is realized by changing two gate voltages on opposite sides of the device. We present calculations showing the data are consistent with a spectrum in which the first excited state of the dot is a valley-orbit state. (C) 2011 American Institute of Physics. [doi:10.1063/1.3666232]",
author = "Zhan Shi and Simmons, {C. B.} and Prance, {J. R.} and Gamble, {John King} and Mark Friesen and Savage, {D. E.} and Lagally, {M. G.} and Coppersmith, {S. N.} and Eriksson, {M. A.}",
year = "2011",
month = dec,
day = "5",
doi = "10.1063/1.3666232",
language = "English",
volume = "99",
pages = "--",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "23",

}

RIS

TY - JOUR

T1 - Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot

AU - Shi, Zhan

AU - Simmons, C. B.

AU - Prance, J. R.

AU - Gamble, John King

AU - Friesen, Mark

AU - Savage, D. E.

AU - Lagally, M. G.

AU - Coppersmith, S. N.

AU - Eriksson, M. A.

PY - 2011/12/5

Y1 - 2011/12/5

N2 - We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field and identify the spin of the lowest three eigenstates in an effective two-electron regime. We extract the singlet-triplet splitting, an essential parameter for spin qubits, from the data. We find it to be tunable by lateral displacement of the dot, which is realized by changing two gate voltages on opposite sides of the device. We present calculations showing the data are consistent with a spectrum in which the first excited state of the dot is a valley-orbit state. (C) 2011 American Institute of Physics. [doi:10.1063/1.3666232]

AB - We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field and identify the spin of the lowest three eigenstates in an effective two-electron regime. We extract the singlet-triplet splitting, an essential parameter for spin qubits, from the data. We find it to be tunable by lateral displacement of the dot, which is realized by changing two gate voltages on opposite sides of the device. We present calculations showing the data are consistent with a spectrum in which the first excited state of the dot is a valley-orbit state. (C) 2011 American Institute of Physics. [doi:10.1063/1.3666232]

U2 - 10.1063/1.3666232

DO - 10.1063/1.3666232

M3 - Journal article

VL - 99

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 233108

ER -