Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot
AU - Shi, Zhan
AU - Simmons, C. B.
AU - Prance, J. R.
AU - Gamble, John King
AU - Friesen, Mark
AU - Savage, D. E.
AU - Lagally, M. G.
AU - Coppersmith, S. N.
AU - Eriksson, M. A.
PY - 2011/12/5
Y1 - 2011/12/5
N2 - We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field and identify the spin of the lowest three eigenstates in an effective two-electron regime. We extract the singlet-triplet splitting, an essential parameter for spin qubits, from the data. We find it to be tunable by lateral displacement of the dot, which is realized by changing two gate voltages on opposite sides of the device. We present calculations showing the data are consistent with a spectrum in which the first excited state of the dot is a valley-orbit state. (C) 2011 American Institute of Physics. [doi:10.1063/1.3666232]
AB - We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field and identify the spin of the lowest three eigenstates in an effective two-electron regime. We extract the singlet-triplet splitting, an essential parameter for spin qubits, from the data. We find it to be tunable by lateral displacement of the dot, which is realized by changing two gate voltages on opposite sides of the device. We present calculations showing the data are consistent with a spectrum in which the first excited state of the dot is a valley-orbit state. (C) 2011 American Institute of Physics. [doi:10.1063/1.3666232]
U2 - 10.1063/1.3666232
DO - 10.1063/1.3666232
M3 - Journal article
VL - 99
SP - -
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 23
M1 - 233108
ER -