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Research

Professor Anthony Krier

Emeritus Professor

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  1. 1998
  2. Published

    Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer

    Krier, A., Chubb, D., Krier, S. E., Hopkinson, M. & Hill, G., 10/1998, In: IEE Proceedings - Optoelectronics. 145, 5, p. 292-296 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Rapid slider LPE growth of InAs quantum wells

    Krier, A., Labadi, Z. & Richardson, J., 10/1998, In: IEE Proceedings - Optoelectronics. 145, 5, p. 297-301 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. 1999
  5. Published

    Conductivity mechanisms in poly(p-phenylene vinylene) light-emitting diodes at high and low bias

    Jones, R., Krier, A., Davidson, K., Schmit, J. P. N. & Zawadzka, J., 26/02/1999, In: Thin Solid Films. 340, 1-2, p. 221-229 9 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    High quality InAs grown by liquid phase epitaxy using gadolinium gettering

    Gao, H. H., Krier, A. & Sherstnev, V. V., 05/1999, In: Semiconductor Science and Technology. 14, 5, p. 441-445 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Synthesis, characterisation and study of photoluminescent properties of head to tail poly(3-pentoxythiophene), poly(3-cyclohexylthiophene) and mixed alkoxy cyclohexyl 3-substituted polythiophenes

    Iraqi, A., Clark, D., Jones, R. & Krier, A., 06/1999, In: Synthetic Metals. 102, 1-3, p. 1220-1221 2 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering

    Krier, A., Gao, H. H. & Sherstnev, V. V., 15/06/1999, In: Journal of Applied Physics. 85, 12, p. 8419-8422 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature

    Gao, H. H., Krier, A., Sherstnev, V. & Yakovlev, Y., 7/08/1999, In: Journal of Physics D: Applied Physics. 32, 15, p. 1768-1772 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    InAsSbP quantum dots grown by liquid phase epitaxy

    Krier, A., Labadi, Z. & Hammiche, A., 21/10/1999, In: Journal of Physics D: Applied Physics. 32, 20, p. 2587-2589 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    High power 4.6 mu m light emitting diodes for CO detection. .

    Krier, A., Gao, H. H., Sherstnev, V. V. & Yakovlev, Y., 21/12/1999, In: Journal of Physics D: Applied Physics. 32, 24, p. 3117-3121 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  12. 2000
  13. Published

    Powerful interface light emitting diodes for methane gas detection. .

    Krier, A. & Sherstnev, V. V., 21/01/2000, In: Journal of Physics D: Applied Physics. 33, 2, p. 101-106 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  14. Published

    Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs. .

    Krier, A., Gao, H. H. & Sherstnev, V. V., 06/2000, In: IEE Proceedings - Optoelectronics. 147, 3, p. 217-221 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  15. Published

    Modelling of InAs thin layer growth from the liquid phase. .

    Krier, A. & Labadi, Z., 06/2000, In: IEE Proceedings - Optoelectronics. 147, 3, p. 222-224 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  16. Published

    A novel LED module for the detection of H2S at 3.8 mu m. .

    Krier, A., Sherstnev, V. V. & Gao, H. H., 21/07/2000, In: Journal of Physics D: Applied Physics. 33, 14, p. 1656-1661 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  17. Published

    Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m. .

    Gao, H. H., Krier, A. & Sherstnev, V. V., 7/08/2000, In: Applied Physics Letters. 77, 6, p. 872-874 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  18. Published

    Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. .

    Krier, A., Krier, S. E. & Labadi, Z., 09/2000, In: Applied Physics A. 71, 3, p. 249-253 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  19. Published

    Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. .

    Arivuoli, D., Lawson, N. S., Krier, A., Attolini, G. & Pelosi, C., 16/10/2000, In: Materials Chemistry and Physics. 66, 2 - 3, p. 207-212 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  20. Published

    Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy. .

    Krier, A., Huang, X. L. & Hammiche, A., 4/12/2000, In: Applied Physics Letters. 77, 23, p. 3791-3793 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  21. Published

    Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection. .

    Sherstnev, V. V., Monahov, A. M., Krier, A. & Hill, G., 11/12/2000, In: Applied Physics Letters. 77, 24, p. 3908-3910 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  22. Published

    Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. .

    Krier, A., Sherstnev, V. V., Labadi, Z., Krier, S. E. & Gao, H. H., 21/12/2000, In: Journal of Physics D: Applied Physics. 33, 24, p. 3156-3160 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  23. 2001
  24. Published

    Investigation on InGaAs/InAlAs quantum cascade lasers.

    Zhang, Q. S., Liu, F. Q., Zhang, Y. Z., Wang, Z. G., Gao, H. H. & Krier, A., 2001, In: Journal of Infrared and Millimeter Waves. 20, 1, p. 41-43 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  25. Published

    Mid-infrared lasers operating on a single quantum well at the type II heterointerface

    Moiseev, K. D., Mikhailova, M. P., Yakovlev, Y. P. & Krier, A., 2001, LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS. New York: IEEE, Vol. 2. p. 534-535 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  26. Published

    LEDs for formaldehyde detection at 3.6 mu m. .

    Krier, A. & Sherstnev, V. V., 7/02/2001, In: Journal of Physics D: Applied Physics. 34, 3, p. 428-432 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  27. Published

    Physics and technology of mid-infrared light emitting diodes. .

    Krier, A., 15/03/2001, In: Philosophical Transactions A: Mathematical, Physical and Engineering Sciences . 359, 1780, p. 599-618 20 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  28. Published

    Liquid phase epitaxial growth and morphology of InSb quantum dots. .

    Krier, A., Huang, X. L. & Hammiche, A., 21/03/2001, In: Journal of Physics D: Applied Physics. 34, 6, p. 874-878 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  29. Published

    Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures. .

    Moiseev, K. D., Krier, A. & Yakovlev, Y. P., 15/10/2001, In: Journal of Applied Physics. 90, 8, p. 3988-3992 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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