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Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. .

Research output: Contribution to Journal/MagazineJournal articlepeer-review

<mark>Journal publication date</mark>21/12/2000
<mark>Journal</mark>Journal of Physics D: Applied Physics
Issue number24
Number of pages5
Pages (from-to)3156-3160
Publication StatusPublished
<mark>Original language</mark>English


Electroluminescence has been observed at 3.3 mum from InAs quantum well LEDs grown from the liquid phase for the first time. A special rapid slider liquid phase epitaxial growth technique was used to produce the wells within the active region of an InAsSbP homojunction p-i-n LED. The light emission was attributed to type II recombination between confined electron and hole states at the InAsSbP/ InAs interfaces of the InAs quantum well. Intense electroluminescence emission was observed at low temperatures from a multi-interface LED which contained three InAs quantum wells in the i-region of the LED structure with emission peaking at 3.68 mum at 250 K.