Research output: Contribution to Journal/Magazine › Journal article › peer-review
<mark>Journal publication date</mark> | 7/08/1999 |
---|---|
<mark>Journal</mark> | Journal of Physics D: Applied Physics |
Issue number | 15 |
Volume | 32 |
Number of pages | 5 |
Pages (from-to) | 1768-1772 |
Publication Status | Published |
<mark>Original language</mark> | English |
This report describes the epitaxial growth and fabrication of room-temperature InAs0.89Sb0.11/InAs0.48Sb0.22P0.30 semiconductor light emitting diodes operating in the mid-infrared wavelength region near 4.5 mu m. The InAs0.89Sb0.11 ternary material used in the light emitting diode active region has a large lattice mismatch with respect to the InAs substrate layer and in order to accommodate this it was necessary to grow a buffer layer with an intermediate composition (InAs0.94Sb0.06). The devices exhibit infrared emission at 4.5 mu m and could be effectively used as the basis of an optical sensor for the environmental monitoring of carbon monoxide at 4.6 mu m and carbon dioxide at 4.2 mu m in various applications.