Research output: Contribution to Journal/Magazine › Journal article › peer-review
| <mark>Journal publication date</mark> | 21/10/1999 |
|---|---|
| <mark>Journal</mark> | Journal of Physics D: Applied Physics |
| Issue number | 20 |
| Volume | 32 |
| Number of pages | 3 |
| Pages (from-to) | 2587-2589 |
| Publication Status | Published |
| <mark>Original language</mark> | English |
We report the growth of the first InAs-based quantum dots from the liquid phase using a novel rapid slider liquid phase epitaxial growth technique. Photoluminescence was observed at 4 K from these InAsSbP quantum dots encapsulated in GaAs and grown on a highly mismatched GaAs substrate.