Rights statement: © 2009 The American Physical Society
Final published version, 221 KB, PDF document
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Article number | 066801 |
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<mark>Journal publication date</mark> | 13/02/2009 |
<mark>Journal</mark> | Physical review letters |
Issue number | 6 |
Volume | 102 |
Number of pages | 4 |
Publication Status | Published |
<mark>Original language</mark> | English |
We propose a method of measuring the electron temperature T-e in mesoscopic conductors and demonstrate experimentally its applicability to micron-size graphene devices in the linear-response regime (T-e approximate to T, the bath temperature). The method can be especially useful in case of overheating, T-e > T. It is based on analysis of the correlation function of mesoscopic conductance fluctuations. Although the fluctuation amplitude strongly depends on the details of electron scattering in graphene, we show that T-e extracted from the correlation function is insensitive to these details.