Research output: Contribution to Journal/Magazine › Journal article › peer-review
| <mark>Journal publication date</mark> | 01/2010 |
|---|---|
| <mark>Journal</mark> | Superlattices and Microstructures |
| Issue number | 1 |
| Volume | 47 |
| Number of pages | 5 |
| Pages (from-to) | 78-82 |
| Publication Status | Published |
| <mark>Original language</mark> | English |
We report on the optical properties of site-controlled InGaAs dots in GaAs barriers grown in pre-patterned, large pitch, pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be extremely narrow, with a standard deviation of 1.19 meV. A dramatic improvement in the spectral purity of emission lines from individual dots is also reported (18-30 mu eV) when compared to the state-of-the-art for site controlled quantum dots. (C) 2009 Elsevier Ltd. All rights reserved.