Rights statement: © 2007 The American Physical Society
Final published version, 155 KB, PDF document
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Article number | 176806 |
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<mark>Journal publication date</mark> | 27/04/2007 |
<mark>Journal</mark> | Physical review letters |
Issue number | 17 |
Volume | 98 |
Number of pages | 4 |
Publication Status | Published |
<mark>Original language</mark> | English |
Bilayer graphene (two coupled graphitic monolayers arranged according to Bernal stacking) is a two-dimensional gapless semiconductor with a peculiar electronic spectrum different from the Dirac spectrum in the monolayer material. In particular, the electronic Fermi line in each of its valleys has a strong p -> -p asymmetry due to trigonal warping, which suppresses the weak localization effect. We show that weak localization in bilayer graphene may be present only in devices with pronounced intervalley scattering, and we evaluate the corresponding magnetoresistance.