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A detailed comparison of measured and simulated optical properties of a short-period GaAs/AlxGa1-xAs distributed Bragg reflector

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Article number055003
<mark>Journal publication date</mark>25/03/2020
<mark>Journal</mark>Semiconductor Science and Technology
Issue number5
Number of pages6
Publication StatusPublished
<mark>Original language</mark>English


A 6-period GaAs/Al$_{0.9}$Ga$_{0.1}$As distributed Bragg reflector (DBR) has been grown and its optical properties have been both measured and simulated. Incremental improvements were made to the simulation, allowing it to account for internal consistency error, incorrect layer thicknesses, and absorption due to substrate doping to improve simulation accuracy. A compositional depth profile using secondary-ion mass spectrometry (SIMS) has been taken and shows that the Al fraction averages 88.0$\pm0.3\%$. It is found that the amplitude of the transmission is significantly affected by absorption in the n-doped GaAs substrate, even though the energy of the transmitted light is well below the GaAs band gap. The wavelength of the features on the transmission spectrum are mostly affected by DBR layer thicknesses. On the other hand, the transmission spectrum is found to be relatively tolerant to changes to Al fraction.