Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - A simplified procedure to calculate the power gain definitions of FET's
AU - Paoloni, C
PY - 2000/3
Y1 - 2000/3
N2 - A graphical method to easily derive the power gain definitions of field-effect transistors (FET's) is proposed in this paper. This method is applicable to MESFET's and high electron-mobility transistors described by the typical pi-model. A new set of simple expressions of the S-parameters, functions of the circuit elements of the FET complete model, is derived. These expressions are presented in graphic form to quickly compute the modules of the FET S-parameters and then the power gains, The accuracy of this approach has been proven by comparison with simulations of the FET complete model.
AB - A graphical method to easily derive the power gain definitions of field-effect transistors (FET's) is proposed in this paper. This method is applicable to MESFET's and high electron-mobility transistors described by the typical pi-model. A new set of simple expressions of the S-parameters, functions of the circuit elements of the FET complete model, is derived. These expressions are presented in graphic form to quickly compute the modules of the FET S-parameters and then the power gains, The accuracy of this approach has been proven by comparison with simulations of the FET complete model.
U2 - 10.1109/22.826850
DO - 10.1109/22.826850
M3 - Journal article
VL - 48
SP - 470
EP - 474
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
SN - 0018-9480
IS - 3
ER -