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A simplified procedure to calculate the power gain definitions of FET's

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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A simplified procedure to calculate the power gain definitions of FET's. / Paoloni, C .
In: IEEE Transactions on Microwave Theory and Techniques, Vol. 48, No. 3, 03.2000, p. 470-474.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Paoloni, C 2000, 'A simplified procedure to calculate the power gain definitions of FET's', IEEE Transactions on Microwave Theory and Techniques, vol. 48, no. 3, pp. 470-474. https://doi.org/10.1109/22.826850

APA

Paoloni, C. (2000). A simplified procedure to calculate the power gain definitions of FET's. IEEE Transactions on Microwave Theory and Techniques, 48(3), 470-474. https://doi.org/10.1109/22.826850

Vancouver

Paoloni C. A simplified procedure to calculate the power gain definitions of FET's. IEEE Transactions on Microwave Theory and Techniques. 2000 Mar;48(3):470-474. doi: 10.1109/22.826850

Author

Paoloni, C . / A simplified procedure to calculate the power gain definitions of FET's. In: IEEE Transactions on Microwave Theory and Techniques. 2000 ; Vol. 48, No. 3. pp. 470-474.

Bibtex

@article{49b4725a14604cb4aea28fbc8005b18b,
title = "A simplified procedure to calculate the power gain definitions of FET's",
abstract = "A graphical method to easily derive the power gain definitions of field-effect transistors (FET's) is proposed in this paper. This method is applicable to MESFET's and high electron-mobility transistors described by the typical pi-model. A new set of simple expressions of the S-parameters, functions of the circuit elements of the FET complete model, is derived. These expressions are presented in graphic form to quickly compute the modules of the FET S-parameters and then the power gains, The accuracy of this approach has been proven by comparison with simulations of the FET complete model.",
author = "C Paoloni",
year = "2000",
month = mar,
doi = "10.1109/22.826850",
language = "English",
volume = "48",
pages = "470--474",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",

}

RIS

TY - JOUR

T1 - A simplified procedure to calculate the power gain definitions of FET's

AU - Paoloni, C

PY - 2000/3

Y1 - 2000/3

N2 - A graphical method to easily derive the power gain definitions of field-effect transistors (FET's) is proposed in this paper. This method is applicable to MESFET's and high electron-mobility transistors described by the typical pi-model. A new set of simple expressions of the S-parameters, functions of the circuit elements of the FET complete model, is derived. These expressions are presented in graphic form to quickly compute the modules of the FET S-parameters and then the power gains, The accuracy of this approach has been proven by comparison with simulations of the FET complete model.

AB - A graphical method to easily derive the power gain definitions of field-effect transistors (FET's) is proposed in this paper. This method is applicable to MESFET's and high electron-mobility transistors described by the typical pi-model. A new set of simple expressions of the S-parameters, functions of the circuit elements of the FET complete model, is derived. These expressions are presented in graphic form to quickly compute the modules of the FET S-parameters and then the power gains, The accuracy of this approach has been proven by comparison with simulations of the FET complete model.

U2 - 10.1109/22.826850

DO - 10.1109/22.826850

M3 - Journal article

VL - 48

SP - 470

EP - 474

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 3

ER -