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AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment

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AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment. / Dimastrodonato, V.; Mereni, L. O.; Young, R. J. et al.
In: Journal of Crystal Growth, Vol. 312, No. 21, 15.10.2010, p. 3057-3062.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Dimastrodonato, V, Mereni, LO, Young, RJ & Pelucchi, E 2010, 'AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment', Journal of Crystal Growth, vol. 312, no. 21, pp. 3057-3062. https://doi.org/10.1016/j.jcrysgro.2010.07.021

APA

Dimastrodonato, V., Mereni, L. O., Young, R. J., & Pelucchi, E. (2010). AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment. Journal of Crystal Growth, 312(21), 3057-3062. https://doi.org/10.1016/j.jcrysgro.2010.07.021

Vancouver

Dimastrodonato V, Mereni LO, Young RJ, Pelucchi E. AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment. Journal of Crystal Growth. 2010 Oct 15;312(21):3057-3062. doi: 10.1016/j.jcrysgro.2010.07.021

Author

Dimastrodonato, V. ; Mereni, L. O. ; Young, R. J. et al. / AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment. In: Journal of Crystal Growth. 2010 ; Vol. 312, No. 21. pp. 3057-3062.

Bibtex

@article{e20ea6fbb7a94be4b2fa97cd46eab96b,
title = "AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment",
abstract = "We present in this work a simple quantum well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a metalorganic vapour phase epitaxy system. Comparisons between two different commercially available purifiers are based on the analysis of low-temperature photoluminescence emission spectra from thick QWs, grown on GaAs substrates misoriented slightly from (1 0 0). Neutral excitons emitted from these structures show extremely narrow linewidths, comparable with those that can be obtained by molecular beam epitaxy in an ultra-high vacuum environment, suggesting that purifications well below the 1 ppb level are needed to achieve high quality quantum well growth. (C) 2010 Elsevier B.V. All rights reserved.",
author = "V. Dimastrodonato and Mereni, {L. O.} and Young, {R. J.} and E. Pelucchi",
year = "2010",
month = oct,
day = "15",
doi = "10.1016/j.jcrysgro.2010.07.021",
language = "English",
volume = "312",
pages = "3057--3062",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "21",

}

RIS

TY - JOUR

T1 - AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment

AU - Dimastrodonato, V.

AU - Mereni, L. O.

AU - Young, R. J.

AU - Pelucchi, E.

PY - 2010/10/15

Y1 - 2010/10/15

N2 - We present in this work a simple quantum well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a metalorganic vapour phase epitaxy system. Comparisons between two different commercially available purifiers are based on the analysis of low-temperature photoluminescence emission spectra from thick QWs, grown on GaAs substrates misoriented slightly from (1 0 0). Neutral excitons emitted from these structures show extremely narrow linewidths, comparable with those that can be obtained by molecular beam epitaxy in an ultra-high vacuum environment, suggesting that purifications well below the 1 ppb level are needed to achieve high quality quantum well growth. (C) 2010 Elsevier B.V. All rights reserved.

AB - We present in this work a simple quantum well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a metalorganic vapour phase epitaxy system. Comparisons between two different commercially available purifiers are based on the analysis of low-temperature photoluminescence emission spectra from thick QWs, grown on GaAs substrates misoriented slightly from (1 0 0). Neutral excitons emitted from these structures show extremely narrow linewidths, comparable with those that can be obtained by molecular beam epitaxy in an ultra-high vacuum environment, suggesting that purifications well below the 1 ppb level are needed to achieve high quality quantum well growth. (C) 2010 Elsevier B.V. All rights reserved.

U2 - 10.1016/j.jcrysgro.2010.07.021

DO - 10.1016/j.jcrysgro.2010.07.021

M3 - Journal article

VL - 312

SP - 3057

EP - 3062

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 21

ER -