Home > Research > Publications & Outputs > Analysing radiative and non-radiative recombina...

Electronic data

  • SPIE_2016 DFL-1

    Rights statement: Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

    Accepted author manuscript, 445 KB, PDF-document

    Available under license: None

Links

Text available via DOI:

View graph of relations

Analysing radiative and non-radiative recombination in InAs quantum dots grown on Si substrates for integrated laser applications

Research output: Contribution to journalJournal article

Published
Close
Article number975809
<mark>Journal publication date</mark>15/03/2016
<mark>Journal</mark>Proceedings of SPIE
Issue number975809
Volume9758
Number of pages7
Publication statusPublished
Original languageEnglish

Abstract

Three InAs quantum dot (QD) samples with dislocation filter layers (DFLs) are grown on Si substrates with and without in-situ annealing. Comparison is made to a similar structure grown on a GaAs substrate. The three Si grown samples have different dislocation densities in their active region as revealed by structural studies. By determining the integrated emission as a function of laser power it is possible to determine the power dependence of the radiative efficiency and compare this across the four samples. The radiative efficiency increases with decreasing dislocation density; this also results in a decrease in the temperature quenching of the PL. A laser structures grown on Si and implementing the same optimum DFL and annealing procedure exhibits a greater than 3 fold reduction in threshold current as well as a two fold increase in slope efficiency in comparison to a device in which no annealing is applied.

Bibliographic note

Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.