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Asymmetry gap in the electronic band structure of bilayer graphene.

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Asymmetry gap in the electronic band structure of bilayer graphene. / McCann, Edward.
In: Physical review B, Vol. 74, No. 16, 10.2006, p. 161403.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

McCann, E 2006, 'Asymmetry gap in the electronic band structure of bilayer graphene.', Physical review B, vol. 74, no. 16, pp. 161403. https://doi.org/10.1103/PhysRevB.74.161403

APA

McCann, E. (2006). Asymmetry gap in the electronic band structure of bilayer graphene. Physical review B, 74(16), 161403. https://doi.org/10.1103/PhysRevB.74.161403

Vancouver

McCann E. Asymmetry gap in the electronic band structure of bilayer graphene. Physical review B. 2006 Oct;74(16):161403. doi: 10.1103/PhysRevB.74.161403

Author

McCann, Edward. / Asymmetry gap in the electronic band structure of bilayer graphene. In: Physical review B. 2006 ; Vol. 74, No. 16. pp. 161403.

Bibtex

@article{84ee41c6c3c1412aac400ba4ea931f9a,
title = "Asymmetry gap in the electronic band structure of bilayer graphene.",
abstract = "A tight binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap U between the conduction and valence bands. In particular, a self consistent Hartree approximation is used to describe imperfect screening of an external gate, employed primarily to control the density n of electrons on the bilayer, resulting in a potential difference between the layers and a density dependent gap U(n). We discuss the influence of a finite asymmetry gap U(0) at zero excess density, caused by the screening of an additional transverse electric field, on observations of the quantum Hall effect.",
author = "Edward McCann",
year = "2006",
month = oct,
doi = "10.1103/PhysRevB.74.161403",
language = "English",
volume = "74",
pages = "161403",
journal = "Physical review B",
issn = "1550-235X",
publisher = "AMER PHYSICAL SOC",
number = "16",

}

RIS

TY - JOUR

T1 - Asymmetry gap in the electronic band structure of bilayer graphene.

AU - McCann, Edward

PY - 2006/10

Y1 - 2006/10

N2 - A tight binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap U between the conduction and valence bands. In particular, a self consistent Hartree approximation is used to describe imperfect screening of an external gate, employed primarily to control the density n of electrons on the bilayer, resulting in a potential difference between the layers and a density dependent gap U(n). We discuss the influence of a finite asymmetry gap U(0) at zero excess density, caused by the screening of an additional transverse electric field, on observations of the quantum Hall effect.

AB - A tight binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap U between the conduction and valence bands. In particular, a self consistent Hartree approximation is used to describe imperfect screening of an external gate, employed primarily to control the density n of electrons on the bilayer, resulting in a potential difference between the layers and a density dependent gap U(n). We discuss the influence of a finite asymmetry gap U(0) at zero excess density, caused by the screening of an additional transverse electric field, on observations of the quantum Hall effect.

U2 - 10.1103/PhysRevB.74.161403

DO - 10.1103/PhysRevB.74.161403

M3 - Journal article

VL - 74

SP - 161403

JO - Physical review B

JF - Physical review B

SN - 1550-235X

IS - 16

ER -