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Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design

Research output: Contribution to journalJournal article

  • Agnes Gubicza
  • David Manrique
  • Laszlo Posa
  • Colin John Lambert
  • György Mihály
  • Miklós Csontos
  • Andras Halbritter
Article number30775
<mark>Journal publication date</mark>4/08/2016
<mark>Journal</mark>Scientific Reports
Number of pages9
Publication statusPublished
Original languageEnglish


Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the active and inert electrodes confining the resistive switching memory cell. Here we demonstrate stable switching behaviour in metallic Ag-Ag2S-Ag nanojunctions at room temperature exhibiting similar characteristics. Our experimental results and numerical simulations reveal that the polarity of the switchings is solely determined by the geometrical asymmetry of the electrode surfaces. By the lithographical design of a proof of principle device we demonstrate the merits of simplified fabrication of atomic-scale, robust planar Ag2S memory cells.