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Ballistic transport and boundary scattering in InSb/In1-xAlxSb mesoscopic devices

Research output: Contribution to journalJournal article


  • A. M. Gilbertson
  • M. Fearn
  • A. Kormanyos
  • D. E. Read
  • Colin Lambert
  • M. T. Emeny
  • T. Ashley
  • S. A. Solin
  • L. F. Cohen
Article number075304
Journal publication date8/02/2011
JournalPhysical Review B
Number of pages10
Original languageEnglish


We describe the influence of hard-wall confinement and lateral dimension on the low-temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/In1-xAlxSb heterostructure. Partially diffuse boundary scattering is found to play a crucial role in the electron dynamics of ballistic crosses and substantially enhance the negative bend resistance. Experimental observations are supported by simulations using a classical billiard ball model for which good agreement is found when diffuse boundary scattering is included.

Bibliographic note

© 2011 American Physical Society