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Ballistic transport and boundary scattering in InSb/In1-xAlxSb mesoscopic devices

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Article number075304
<mark>Journal publication date</mark>8/02/2011
<mark>Journal</mark>Physical review B
Issue number7
Number of pages10
Pages (from-to)-
Publication statusPublished
Original languageEnglish


We describe the influence of hard-wall confinement and lateral dimension on the low-temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/In1-xAlxSb heterostructure. Partially diffuse boundary scattering is found to play a crucial role in the electron dynamics of ballistic crosses and substantially enhance the negative bend resistance. Experimental observations are supported by simulations using a classical billiard ball model for which good agreement is found when diffuse boundary scattering is included.

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© 2011 American Physical Society