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Band-structure-dependent nonlinear giant magnetoresistance in Ni1-xFex dual spin valves

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Band-structure-dependent nonlinear giant magnetoresistance in Ni1-xFex dual spin valves. / Banerjee, N; Robinson, JWA; Aziz, Atif et al.
In: Physical review B, Vol. 86, No. 13, 134423, 24.10.2012.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Banerjee, N, Robinson, JWA, Aziz, A, Ali, M, Hickey, BJ & Blamire, MG 2012, 'Band-structure-dependent nonlinear giant magnetoresistance in Ni1-xFex dual spin valves', Physical review B, vol. 86, no. 13, 134423. https://doi.org/10.1103/PhysRevB.86.134423

APA

Banerjee, N., Robinson, JWA., Aziz, A., Ali, M., Hickey, BJ., & Blamire, MG. (2012). Band-structure-dependent nonlinear giant magnetoresistance in Ni1-xFex dual spin valves. Physical review B, 86(13), Article 134423. https://doi.org/10.1103/PhysRevB.86.134423

Vancouver

Banerjee N, Robinson JWA, Aziz A, Ali M, Hickey BJ, Blamire MG. Band-structure-dependent nonlinear giant magnetoresistance in Ni1-xFex dual spin valves. Physical review B. 2012 Oct 24;86(13):134423. doi: 10.1103/PhysRevB.86.134423

Author

Banerjee, N ; Robinson, JWA ; Aziz, Atif et al. / Band-structure-dependent nonlinear giant magnetoresistance in Ni1-xFex dual spin valves. In: Physical review B. 2012 ; Vol. 86, No. 13.

Bibtex

@article{ec7414152c6940fbac781d1f8c7dc62d,
title = "Band-structure-dependent nonlinear giant magnetoresistance in Ni1-xFex dual spin valves",
abstract = "Conventional giant magnetoresistance (GMR) in spin valves is current-independent, so the resistance of a device depends only on the relative orientation of the magnetic layers. In dual spin valves consisting of three ferromagnetic (FM) layers separated by nonmagnetic (NM) spacers (i.e., a FM1/NM/FM2/NM/FM1), GMR can be current-dependent if spin can accumulate in FM2 when outer FM1 layers are aligned antiparallel. Currently the underlying physics is poorly understood, although spin accumulation in FM2 is likely to depend on the gradient in the density of states at the Fermi energy of the ferromagnet. To investigate this hypothesis, we have measured a series of dual spin valves with Ni1-xFex as FM2 layers of varying composition. We show that both the magnitude and sign of the nonlinear GMR depend strongly on the Fe content and thus on the band structure of the ferromagnet FM2. ",
keywords = "Nonlinear giant magnetoresistance, Spintronics, Spin electronics",
author = "N Banerjee and JWA Robinson and Atif Aziz and M Ali and BJ Hickey and MG Blamire",
note = "{\textcopyright}2012 American Physical Society",
year = "2012",
month = oct,
day = "24",
doi = "10.1103/PhysRevB.86.134423",
language = "English",
volume = "86",
journal = "Physical review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "13",

}

RIS

TY - JOUR

T1 - Band-structure-dependent nonlinear giant magnetoresistance in Ni1-xFex dual spin valves

AU - Banerjee, N

AU - Robinson, JWA

AU - Aziz, Atif

AU - Ali, M

AU - Hickey, BJ

AU - Blamire, MG

N1 - ©2012 American Physical Society

PY - 2012/10/24

Y1 - 2012/10/24

N2 - Conventional giant magnetoresistance (GMR) in spin valves is current-independent, so the resistance of a device depends only on the relative orientation of the magnetic layers. In dual spin valves consisting of three ferromagnetic (FM) layers separated by nonmagnetic (NM) spacers (i.e., a FM1/NM/FM2/NM/FM1), GMR can be current-dependent if spin can accumulate in FM2 when outer FM1 layers are aligned antiparallel. Currently the underlying physics is poorly understood, although spin accumulation in FM2 is likely to depend on the gradient in the density of states at the Fermi energy of the ferromagnet. To investigate this hypothesis, we have measured a series of dual spin valves with Ni1-xFex as FM2 layers of varying composition. We show that both the magnitude and sign of the nonlinear GMR depend strongly on the Fe content and thus on the band structure of the ferromagnet FM2.

AB - Conventional giant magnetoresistance (GMR) in spin valves is current-independent, so the resistance of a device depends only on the relative orientation of the magnetic layers. In dual spin valves consisting of three ferromagnetic (FM) layers separated by nonmagnetic (NM) spacers (i.e., a FM1/NM/FM2/NM/FM1), GMR can be current-dependent if spin can accumulate in FM2 when outer FM1 layers are aligned antiparallel. Currently the underlying physics is poorly understood, although spin accumulation in FM2 is likely to depend on the gradient in the density of states at the Fermi energy of the ferromagnet. To investigate this hypothesis, we have measured a series of dual spin valves with Ni1-xFex as FM2 layers of varying composition. We show that both the magnitude and sign of the nonlinear GMR depend strongly on the Fe content and thus on the band structure of the ferromagnet FM2.

KW - Nonlinear giant magnetoresistance

KW - Spintronics

KW - Spin electronics

U2 - 10.1103/PhysRevB.86.134423

DO - 10.1103/PhysRevB.86.134423

M3 - Journal article

VL - 86

JO - Physical review B

JF - Physical review B

SN - 1098-0121

IS - 13

M1 - 134423

ER -