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Charge separation and temperature-induced carrier migration in Ga1−x Inx N y As1− y multiple quantum wells

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Charge separation and temperature-induced carrier migration in Ga1−x Inx N y As1− y multiple quantum wells. / Nuytten, Thomas; Hayne, Manus; Bansal, Bhavtosh et al.
In: Physical review B, Vol. 84, 045302, 05.07.2011.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Nuytten, T, Hayne, M, Bansal, B, Liu, HY, Hopkinson, M & Moshchalkov, VV 2011, 'Charge separation and temperature-induced carrier migration in Ga1−x Inx N y As1− y multiple quantum wells', Physical review B, vol. 84, 045302. https://doi.org/10.1103/PhysRevB.84.045302

APA

Nuytten, T., Hayne, M., Bansal, B., Liu, H. Y., Hopkinson, M., & Moshchalkov, V. V. (2011). Charge separation and temperature-induced carrier migration in Ga1−x Inx N y As1− y multiple quantum wells. Physical review B, 84, Article 045302. https://doi.org/10.1103/PhysRevB.84.045302

Vancouver

Nuytten T, Hayne M, Bansal B, Liu HY, Hopkinson M, Moshchalkov VV. Charge separation and temperature-induced carrier migration in Ga1−x Inx N y As1− y multiple quantum wells. Physical review B. 2011 Jul 5;84:045302. doi: 10.1103/PhysRevB.84.045302

Author

Nuytten, Thomas ; Hayne, Manus ; Bansal, Bhavtosh et al. / Charge separation and temperature-induced carrier migration in Ga1−x Inx N y As1− y multiple quantum wells. In: Physical review B. 2011 ; Vol. 84.

Bibtex

@article{5310490a6e1e4c5aba5db77516ada0b7,
title = "Charge separation and temperature-induced carrier migration in Ga1−x Inx N y As1− y multiple quantum wells",
abstract = "We have investigated the photoluminescence (PL) of two carefully selected dilute nitride Ga1−xInxNyAs1−y multiple quantum well structures in magnetic fields up to 50 T as a function of temperature and excitation power. The observation of a nonmonotonic dependence of the PL energy on temperature indicates that localized states dominate the luminescence at low temperature, while magneto-PL experiments give new insights into the nature of the localization. We find that the low-temperature spatial distribution of carriers in the quantum well is different for electrons and holes because they are captured by different disorder-induced complexes that are spatially separated. A study of the thermalization of the carriers toward free states leads to the determination of the free-exciton wave-function extent in these systems and enables an assessment of the localization potentials induced by inhomogeneity in the quantum well.",
keywords = "Dilute nitrides, multiple quantum wells, magneto-photoluminescence, excitons",
author = "Thomas Nuytten and Manus Hayne and Bhavtosh Bansal and Liu, {H. Y.} and Mark Hopkinson and Moshchalkov, {Victor V.}",
year = "2011",
month = jul,
day = "5",
doi = "10.1103/PhysRevB.84.045302",
language = "English",
volume = "84",
journal = "Physical review B",
issn = "1550-235X",
publisher = "AMER PHYSICAL SOC",

}

RIS

TY - JOUR

T1 - Charge separation and temperature-induced carrier migration in Ga1−x Inx N y As1− y multiple quantum wells

AU - Nuytten, Thomas

AU - Hayne, Manus

AU - Bansal, Bhavtosh

AU - Liu, H. Y.

AU - Hopkinson, Mark

AU - Moshchalkov, Victor V.

PY - 2011/7/5

Y1 - 2011/7/5

N2 - We have investigated the photoluminescence (PL) of two carefully selected dilute nitride Ga1−xInxNyAs1−y multiple quantum well structures in magnetic fields up to 50 T as a function of temperature and excitation power. The observation of a nonmonotonic dependence of the PL energy on temperature indicates that localized states dominate the luminescence at low temperature, while magneto-PL experiments give new insights into the nature of the localization. We find that the low-temperature spatial distribution of carriers in the quantum well is different for electrons and holes because they are captured by different disorder-induced complexes that are spatially separated. A study of the thermalization of the carriers toward free states leads to the determination of the free-exciton wave-function extent in these systems and enables an assessment of the localization potentials induced by inhomogeneity in the quantum well.

AB - We have investigated the photoluminescence (PL) of two carefully selected dilute nitride Ga1−xInxNyAs1−y multiple quantum well structures in magnetic fields up to 50 T as a function of temperature and excitation power. The observation of a nonmonotonic dependence of the PL energy on temperature indicates that localized states dominate the luminescence at low temperature, while magneto-PL experiments give new insights into the nature of the localization. We find that the low-temperature spatial distribution of carriers in the quantum well is different for electrons and holes because they are captured by different disorder-induced complexes that are spatially separated. A study of the thermalization of the carriers toward free states leads to the determination of the free-exciton wave-function extent in these systems and enables an assessment of the localization potentials induced by inhomogeneity in the quantum well.

KW - Dilute nitrides

KW - multiple quantum wells

KW - magneto-photoluminescence

KW - excitons

U2 - 10.1103/PhysRevB.84.045302

DO - 10.1103/PhysRevB.84.045302

M3 - Journal article

VL - 84

JO - Physical review B

JF - Physical review B

SN - 1550-235X

M1 - 045302

ER -