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Charged nano-domes and bubbles in epitaxial graphene

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Charged nano-domes and bubbles in epitaxial graphene. / Trabelsi, A.B.G.; Kusmartsev, F.V.; Robinson, Benjamin; Ouerghi, A.; Kusmartseva, O.E.; Kolosov, Oleg; Mazzocco, Riccardo; Gaifullin, M.B.; Oueslati, M.

In: Nanotechnology, Vol. 25, No. 16, 165704, 28.03.2014.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Trabelsi, ABG, Kusmartsev, FV, Robinson, B, Ouerghi, A, Kusmartseva, OE, Kolosov, O, Mazzocco, R, Gaifullin, MB & Oueslati, M 2014, 'Charged nano-domes and bubbles in epitaxial graphene', Nanotechnology, vol. 25, no. 16, 165704. https://doi.org/10.1088/0957-4484/25/16/165704

APA

Trabelsi, A. B. G., Kusmartsev, F. V., Robinson, B., Ouerghi, A., Kusmartseva, O. E., Kolosov, O., Mazzocco, R., Gaifullin, M. B., & Oueslati, M. (2014). Charged nano-domes and bubbles in epitaxial graphene. Nanotechnology, 25(16), [165704]. https://doi.org/10.1088/0957-4484/25/16/165704

Vancouver

Trabelsi ABG, Kusmartsev FV, Robinson B, Ouerghi A, Kusmartseva OE, Kolosov O et al. Charged nano-domes and bubbles in epitaxial graphene. Nanotechnology. 2014 Mar 28;25(16). 165704. https://doi.org/10.1088/0957-4484/25/16/165704

Author

Trabelsi, A.B.G. ; Kusmartsev, F.V. ; Robinson, Benjamin ; Ouerghi, A. ; Kusmartseva, O.E. ; Kolosov, Oleg ; Mazzocco, Riccardo ; Gaifullin, M.B. ; Oueslati, M. / Charged nano-domes and bubbles in epitaxial graphene. In: Nanotechnology. 2014 ; Vol. 25, No. 16.

Bibtex

@article{b02d9a01663c4c0396f264e3247eaa80,
title = "Charged nano-domes and bubbles in epitaxial graphene",
abstract = "For the first time, new epitaxial graphene nanostructures resembling charged “bubbles” and “domes” are reported. A strong influence of the change in morphology on the graphene layer{\textquoteright}s electronic, mechanical and optical properties has been shown. The morphological properties of these structures have been studied with Atomic Force Microscopy (AFM), Ultrasonic Force Microscopy (UFM) and Raman spectroscopy. After initial optical microscopy observation of the graphene surface distortions , a detailed description of the surface morphology, via AFM and nanomechanical UFM measurements, was obatined, allowing identification of new graphene nanostructures - domes and bubbles ranging from few tens of nanometres (150 - 200 nm) to few µm in size. The AFM topographical and UFM stiffness data implied the freestanding nature of the graphene layer within the domes and bubbles, with a height on the order of 5 - 10 nm. Raman spectroscopy mappings of G and 2D bands and their ratio confirm not only the graphene composition of these structures but also the existence of step bunching, defect variations and the carrier density distribution. In particular, it indicates that inside the bubbles and substrate there arises complex charge redistribution, in fact, the graphene bubble-substrate interface forms a charged capacitance. We have determined the strength of electric field inside the bubble - substrate interface which may lead to a mini-gap opening of the order of 5 meV for epitaxial graphene grown on 4H-SiC face terminated carbon. ",
keywords = "Graphene, Bubbles, Domes, Charge density distribution, UFM, Raman spectroscopy",
author = "A.B.G. Trabelsi and F.V. Kusmartsev and Benjamin Robinson and A. Ouerghi and O.E. Kusmartseva and Oleg Kolosov and Riccardo Mazzocco and M.B. Gaifullin and M. Oueslati",
year = "2014",
month = mar,
day = "28",
doi = "10.1088/0957-4484/25/16/165704",
language = "English",
volume = "25",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "16",

}

RIS

TY - JOUR

T1 - Charged nano-domes and bubbles in epitaxial graphene

AU - Trabelsi, A.B.G.

AU - Kusmartsev, F.V.

AU - Robinson, Benjamin

AU - Ouerghi, A.

AU - Kusmartseva, O.E.

AU - Kolosov, Oleg

AU - Mazzocco, Riccardo

AU - Gaifullin, M.B.

AU - Oueslati, M.

PY - 2014/3/28

Y1 - 2014/3/28

N2 - For the first time, new epitaxial graphene nanostructures resembling charged “bubbles” and “domes” are reported. A strong influence of the change in morphology on the graphene layer’s electronic, mechanical and optical properties has been shown. The morphological properties of these structures have been studied with Atomic Force Microscopy (AFM), Ultrasonic Force Microscopy (UFM) and Raman spectroscopy. After initial optical microscopy observation of the graphene surface distortions , a detailed description of the surface morphology, via AFM and nanomechanical UFM measurements, was obatined, allowing identification of new graphene nanostructures - domes and bubbles ranging from few tens of nanometres (150 - 200 nm) to few µm in size. The AFM topographical and UFM stiffness data implied the freestanding nature of the graphene layer within the domes and bubbles, with a height on the order of 5 - 10 nm. Raman spectroscopy mappings of G and 2D bands and their ratio confirm not only the graphene composition of these structures but also the existence of step bunching, defect variations and the carrier density distribution. In particular, it indicates that inside the bubbles and substrate there arises complex charge redistribution, in fact, the graphene bubble-substrate interface forms a charged capacitance. We have determined the strength of electric field inside the bubble - substrate interface which may lead to a mini-gap opening of the order of 5 meV for epitaxial graphene grown on 4H-SiC face terminated carbon.

AB - For the first time, new epitaxial graphene nanostructures resembling charged “bubbles” and “domes” are reported. A strong influence of the change in morphology on the graphene layer’s electronic, mechanical and optical properties has been shown. The morphological properties of these structures have been studied with Atomic Force Microscopy (AFM), Ultrasonic Force Microscopy (UFM) and Raman spectroscopy. After initial optical microscopy observation of the graphene surface distortions , a detailed description of the surface morphology, via AFM and nanomechanical UFM measurements, was obatined, allowing identification of new graphene nanostructures - domes and bubbles ranging from few tens of nanometres (150 - 200 nm) to few µm in size. The AFM topographical and UFM stiffness data implied the freestanding nature of the graphene layer within the domes and bubbles, with a height on the order of 5 - 10 nm. Raman spectroscopy mappings of G and 2D bands and their ratio confirm not only the graphene composition of these structures but also the existence of step bunching, defect variations and the carrier density distribution. In particular, it indicates that inside the bubbles and substrate there arises complex charge redistribution, in fact, the graphene bubble-substrate interface forms a charged capacitance. We have determined the strength of electric field inside the bubble - substrate interface which may lead to a mini-gap opening of the order of 5 meV for epitaxial graphene grown on 4H-SiC face terminated carbon.

KW - Graphene

KW - Bubbles

KW - Domes

KW - Charge density distribution

KW - UFM

KW - Raman spectroscopy

U2 - 10.1088/0957-4484/25/16/165704

DO - 10.1088/0957-4484/25/16/165704

M3 - Journal article

VL - 25

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 16

M1 - 165704

ER -