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  • Tilka et al J Appl Phys 2016 1.4955043

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Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures

Research output: Contribution to journalJournal article

Published
  • J. A. Tilka
  • J. Park
  • Y. Ahn
  • A. Pateras
  • K. C. Sampson
  • D. E. Savage
  • Jonathan Robert Prance
  • C. B. Simmons
  • S. N. Coppersmith
  • M. A. Eriksson
  • M. G. Lagally
  • M. V. Holt
  • P. G. Evans
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Article number015304
<mark>Journal publication date</mark>6/07/2016
<mark>Journal</mark>Journal of Applied Physics
Volume120
Number of pages7
Publication statusPublished
Original languageEnglish

Abstract

The highly coherent and tightly focused x-ray beams produced by hard x-ray light sources enable the nanoscale characterization of the structure of electronic materials but are accompanied by significant challenges in the interpretation of diffraction and scattering patterns. X-ray nanobeams exhibit optical coherence combined with a large angular divergence introduced by the x-ray focusing optics. The scattering of nanofocused x-ray beams from intricate semiconductor heterostructures produces a complex distribution of scattered intensity. We report here an extension of coherent x-ray optical simulations of convergent x-ray beam diffraction patterns to arbitrary x-ray incident angles to allow the nanobeam diffraction patterns of complex heterostructures to be simulated faithfully. These methods are used to extract the misorientation of lattice planes and the strain of individual layers from synchrotron x-ray nanobeam diffraction patterns of Si/SiGe heterostructures relevant to applications in quantum electronic devices. The systematic interpretation of nanobeam diffraction patterns from semiconductor heterostructures presents a new opportunity in characterizing and ultimately designing electronic materials.

Bibliographic note

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in J. App. Phys. 120, 015304 (2016) and may be found at http://scitation.aip.org/content/aip/journal/jap/120/1/10.1063/1.4955043.